pulse transformer bv 070
Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation
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UF281
uF261oov
7305OlB2-03
pulse transformer bv 070
145J
UF281OOV
wacom
ds12a
50 Ohm transformer
UF26
transformer
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tyn 277
Abstract: 256-TFAU 256-TWM paladin 253-TAL 256-TWL 256-TWH AS1384 253-THZ 256-TYN 253-TAL
Text: Paladin Transducers 250 Series Class 0.5 An extensive range of Class 0.5 transducers providing measurement, isolation and conversion of electrical parameters into industry standard DC output signals. The range offers protection against high voltage and overload, and resistance
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256-TFSU
256-TFCU
256-TFAU
256-TFTU
256-TFEU
256-TFBU
256-TPDU
tyn 277
256-TFAU
256-TWM
paladin 253-TAL
256-TWL
256-TWH
AS1384
253-THZ
256-TYN
253-TAL
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EIA-541
Abstract: No abstract text available
Text: PD - 96082A IRF7832ZUPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and
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6082A
IRF7832ZUPbF
EIA-481
EIA-541.
EIA-541
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Untitled
Abstract: No abstract text available
Text: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
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IRF7832Z
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS
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IRF7832ZPbF
EIA-481
EIA-541.
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F7101
Abstract: EIA-541 IRF7101
Text: PD - 95264A IRF7811APbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l 100% RG Tested l Lead-Free
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5264A
IRF7811APbF
EIA-481
EIA-541.
F7101
EIA-541
IRF7101
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EIA-541
Abstract: F7101 IRF7101 IRF9910PbF
Text: PD - 95728 IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF9910PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
IRF9910PbF
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diode AR S1 99
Abstract: IRF9910PbF
Text: PD - 95728 IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF9910PbF
-55merchantability,
12-Mar-07
diode AR S1 99
IRF9910PbF
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IRF9910PBF
Abstract: No abstract text available
Text: IRF9910PbF-1 VDS 20 RDS on m ax Q1 HEXFET Power MOSFET V 13.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 9.3 (@VGS = 10V) Qg (typical) Q1 7.4 Qg (typical) Q2 15 ID(@TA = 25°C)Q1 10 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A ID(@TA = 25°C)Q2 12 Applications
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IRF9910PbF-1
IRF9910PBF
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p421 coupler
Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety
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TLP227GA
TLP227G
TLP227GA
TLP227G/TLP597GA/TLP227GA-2
p421 coupler
MOC604A
CNY17-3Z
TLP250 MOSFET DRIVER application note
TLP250 MOSFET DRIVER
p421 Photocoupler
CNY17-2Z
TRANSISTOR AC125
TLP181 SMD 11-4C1 TYPE
moc3041 application note
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echelon FT-x3
Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r
Text: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of
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05-0199-01A
TPT/XF-1250
echelon FT-x3
neuron 5000
14255R-400
abstract on mini ups system circuit design
schematic diagram offline UPS
EN14908
FT5000 EVB
echelon FT-x2
HP8656B service manual
14235r
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Series 5000 Chip Data Book
Abstract: echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000
Text: Series 5000 Chip Data Book 0 0 5 - 0 1 9 9 - 0 1B Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of
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TPT/XF-1250
Series 5000 Chip Data Book
echelon FT-x3
echelon FT-x2
echelon FT-x3 14255R
abstract on mini ups system
abstract on mini ups system circuit design
schematic diagram offline UPS
eePROM 2832
FCC-801-M3-16A
neuron 5000
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H1163
Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
Text: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥
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T012a
MCA11G1
MCA11G2
H11G2)
MCA11G3
H11G3)
C2090
C2083
MCA11G1
MCA11G2
H1163
C1709
C1706
MCA11G3
C2083
C2090
H11G1
H11G2
H11G3
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Untitled
Abstract: No abstract text available
Text: TSC $ S M B J S E R IE S Surface Mount Transient Voltage Suppressor Voltage Range 5.0 to 170 Volts 600 Watts Peak Power S M B /D O -2 1 4 A J Features -{•4- ❖ 4- ❖ For surface mounted application Low profile package Built-in strain relief Glass passivated junction
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000D7Ã
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optocoupler A 2232
Abstract: HCPL2231 2232 OPTOCOUPLER HCPL2232
Text: HEW LETT PACKARD VERY HIGH CMR, WIDE Vcc DUAL LOGIC CATE OPTOCOUPLER HCPL-2231 HCPL-2232 OUTLINE DRAWING SCHEMATIC t 9^40 .3701 _ 9,90 13901 0.18 (.007 035(7013) H P X X X X '' YYW W J\J^ TYPE NUMBER DATE CODE I 6.10 ( 2401 7.36 (.290) (.260) T M ( 3 ÏÏÏ)
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HCPL-2231
HCPL-2232
HCPL-2232)
E5S361)
optocoupler A 2232
HCPL2231
2232 OPTOCOUPLER
HCPL2232
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S4BV
Abstract: irl3103s
Text: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V
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1338D
IRL3103S
S4BV
irl3103s
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HP2400
Abstract: HP-2400 TEm 2411 hcpl2411
Text: 20 M BAUD HIGH CMR LOGIC GATE 0PT0C 0U PLER HCPL-2400 HCPL-2411 O U T L IN E D R A W IN G _ 9 .40 .370 9 9 0 (.390) HP .T Y P E N U M BER D A T E CODE I 6J0 U 40) 7.36 (.290) 6.60 (.260) 7.88 (.310) 240 0 V YYWW*> Kul PIN ONE R EC O G N ITIO N 1.78 (.0701 M A X
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HCPL-2400
HCPL-2411
HCPL-2400
HCPL-2400/11
HP2400
HP-2400
TEm 2411
hcpl2411
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PEC 513 DIODE
Abstract: SEEQ EM2A seeq 8023 CT PR 3002 CA618 EM2C
Text: Ether Module -EM2C 10Base-2 Technology, Incorporated Ethernet Transceiver Module with on Board Isolation Transformer & DC/DC Converter April 1994 Introduction The Thin N et Cheapemet module provides a complete Local Area Network interface fo ra station, without a transceivercable. The EM2C is an encased module containing
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10Base-2
83C92C
80C03,
800S/80C04A
PEC 513 DIODE
SEEQ EM2A
seeq 8023
CT PR 3002
CA618
EM2C
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
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83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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Untitled
Abstract: No abstract text available
Text: 3 ] Integrated ICS1890 Circuit Systems, inc. Advance Information 10Base-T/100Base-TX Integrated PHYceiver General Description Features The ICS1890 is a fully integrated physical layer device sup porting 10 and lOOMb/s CSMA/CD Ethernet applications. DTE adapter cards or motherboards , switching hub, repeater
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ICS1890
10Base-T/100Base-TX
ICS1890
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