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MACOM UF2815B RF MOSFET 28V 6L-FLG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UF2815B	Bulk			25	1 - 10 - 100 $84.2 1000 $84.2 10000 $84.2	Buy Now
Mouser Electronics	UF2815B					1 - 10 - 100 $94.47 1000 $94.47 10000 $94.47	Get Quote
Richardson RFPD	UF2815B				40	1 - 10 - 100 $80.83 1000 $80.83 10000 $80.83	Buy Now
MACOM UF28150J RF MOSFET 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UF28150J	Tray			10	1 - 10 $424.262 100 $424.262 1000 $424.262 10000 $424.262	Buy Now
Mouser Electronics	UF28150J		22			1 $458.02 10 $425.83 100 $425.83 1000 $425.83 10000 $425.83	Buy Now
Richardson RFPD	UF28150J				1	1 $470.42 10 $470.42 100 $470.42 1000 $470.42 10000 $470.42	Buy Now
MACOM UF28100M RF MOSFET N-CHANNEL 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UF28100M	Bulk			10	1 - 10 $306.375 100 $306.375 1000 $306.375 10000 $306.375	Buy Now
Mouser Electronics	UF28100M					1 - 10 $327.75 100 $323.83 1000 $323.83 10000 $323.83	Get Quote
Verical	UF28100M		24		1	1 $294.15 10 $294.15 100 $294.15 1000 $294.15 10000 $294.15	Buy Now
Richardson RFPD	UF28100M		24		10	1 - 10 $294.12 100 $294.12 1000 $294.12 10000 $294.12	Buy Now
MACOM UF28100V RF MOSFET N-CHANNEL 28V 8L-FLG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UF28100V	Bulk			25	1 - 10 - 100 $242.5124 1000 $242.5124 10000 $242.5124	Buy Now
Mouser Electronics	UF28100V		18			1 $278.23 10 $260.59 100 $250.78 1000 $250.78 10000 $250.78	Buy Now
Richardson RFPD	UF28100V				20	1 - 10 - 100 $252 1000 $252 10000 $252	Buy Now
MACOM UF28100H RF MOSFET 28V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UF28100H	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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UF281 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
UF28100	Tyco Electronics	RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz	Original	PDF
UF28100H	M/A-COM	FET, Enhancement, N Channel, 2 VThreshold, ID 12 A	Original	PDF
UF28100M	M/A-COM	RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz	Original	PDF
UF28100V	Tyco Electronics	RF MOSFET Power Transistor	Original	PDF
UF2810P	Tyco Electronics	100-500 MHz, 10 W, 28 V, RF MOSFET power transistor	Original	PDF
UF28150	Tyco Electronics	POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V	Original	PDF
UF28150J	Tyco Electronics	POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V	Original	PDF
UF28156	Tyco Electronics	RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz	Original	PDF
UF2815B	M/A-COM	MOSFET, Enhancement Mode, N Channel, -Pin	Original	PDF
UF2815OJ	M/A-COM	RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz	Original	PDF
UF281OOH	Tyco Electronics	RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz	Original	PDF
UF281OOM	Tyco Electronics	RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz	Original	PDF
UF281OOV	Tyco Electronics	RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz	Original	PDF
UF281OP	Tyco Electronics	RF MOSFET Power Transistor, IOW, 28V 100 - 500 MHz	Original	PDF

UF281 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UF2815OJ Abstract: No abstract text available Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C	Original	PDF	UF2815OJ -65to UF2815OJ
F-627-8-Q1 Abstract: F6278-Q1 Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3	Original	PDF	UF28150J 100MHz-500MHz, F-627-8-Q1 F6278-Q1
UF2815B Abstract: k 815 MOSFET Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	PDF	UF2815B UF2815B k 815 MOSFET
UF28100V Abstract: UF28100 mosfet popwer Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices	Original	PDF	UF28100V UF28100V UF28100 mosfet popwer
balun transformer 75 ohm Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH Text: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS	Original	PDF	UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH
pulse transformer bv 070 Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation	Original	PDF	UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
transistor 1 j42 Abstract: transistor j42 nj TRANSISTOR 2L43 UF281 Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation	Original	PDF	UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43
UF28156 Abstract: UF2815B L5 mosfet Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation	Original	PDF	UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet
Untitled Abstract: No abstract text available Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	PDF	UF2815B
F627-8Q1 Abstract: F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8 Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3	Original	PDF	UF28150J 100MHz-500MHz, F627-8Q1 F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8
UF28100M Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C	Original	PDF	UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E
Untitled Abstract: No abstract text available Text: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices	Original	PDF	UF28100V 25-j1
UF28100H Abstract: No abstract text available Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	UF28100H 25-j1 UF28100H
J50 mosfet Abstract: UF2810P 700J1 Text: UF2810P RF Power MOSFET Transistor 10W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	PDF	UF2810P J50 mosfet UF2810P 700J1

UF28100H Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w Text: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	UF28100H UF28100H 75J10 power supply 100w UF28100 transistor 200mhz 100w
UF28100M Abstract: UF28100 transistor 200mhz 100w Text: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	UF28100M UF28100M UF28100 transistor 200mhz 100w
transistor f 948 Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233 Text: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching	Original	PDF	UF28150J transistor f 948 transistor 936 j78 transistor J31 transistor GP 948 UF2815OJ DS-175 pd233
This article Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left	Original	PDF	namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
capacitor 60uF Abstract: 260pf capacitor uf28100v UF28100 ER 35 e transformer Text: A f a COM W an A M P c o m p a n y RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100V V2.00 Features triT • N -Channel E n h an cem en t M ode D evice • DM OS Structure • Low er C ap acitan ces for B roadb an d O p era tio n • High Saturated O u tp u t Pow er	OCR Scan	PDF	UF28100V Uf28100V capacitor 60uF 260pf capacitor UF28100 ER 35 e transformer
Untitled Abstract: No abstract text available Text: M fa œ m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J V2.00 Features r*\|T • N -Channel E n han cem en t M ode D evice • DM OS Structure • I,ow er C ap acitan ces for B roadban d O p eratio n • C o m m o n S ou rce C on figuration	OCR Scan	PDF	UF28150J
balun transformer 75 ohm Abstract: 300 ohms balun Text: Ajfomm m an A M P com pany RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100H V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration High Saturated O utput Power Lower Noise Figure Than Competitive Devices	OCR Scan	PDF	UF28100H UF201OOH 0311THICK balun transformer 75 ohm 300 ohms balun
Untitled Abstract: No abstract text available Text: A m ßan A McP com c pany m RF MOSFET Power Transistor, 10W, 28V 100-500 MHz UF2810P V2.00 Features • N-Channel Enhancement Mode Device • DMOS Structure • • • • l.ower Capacitances for Broadband Operation Common Source Configuration I.ower Noise Floor	OCR Scan	PDF	UF2810P UF8610P
cis 280v Abstract: No abstract text available Text: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz UF2815B Features • • • • • • N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration	OCR Scan	PDF	UF2815B UF2815B 50OHM cis 280v
25 ohm semirigid Abstract: No abstract text available Text: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er	OCR Scan	PDF	UF28100M 303BRANSFORMER. UF201OOM 25 ohm semirigid

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UF281 Search Results

UF281 Price and Stock

MACOM UF2815B

MACOM UF28150J

MACOM UF28100M

MACOM UF28100V

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UF281 Datasheets (14)

UF281 Datasheets Context Search

UF2815OJ

F-627-8-Q1

UF2815B

UF28100V

balun transformer 75 ohm

pulse transformer bv 070

transistor 1 j42

UF28156

Untitled

F627-8Q1

UF28100M

Untitled

UF28100H

J50 mosfet

UF28100H

UF28100M

transistor f 948

This article

capacitor 60uF

Untitled

balun transformer 75 ohm

Untitled

cis 280v

25 ohm semirigid