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    POWER TRANSISTOR TRANSISTORS EQUIVALENTS Search Results

    POWER TRANSISTOR TRANSISTORS EQUIVALENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR TRANSISTORS EQUIVALENTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUX48A

    Abstract: BUX48 BUX48 ST ST IC date code marking JESD97 transistor bux48 bux48a st
    Text: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power


    Original     		PDF BUX48 BUX48A BUX48 BUX48A BUX48 ST ST IC date code marking JESD97 transistor bux48 bux48a st

    BD241C

    Abstract: BD241A BD242A BD242C JESD97
    Text: BD241A BD241C NPN power transistors Features • . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD241A BD241C BD242A BD242C. O-220 BD241C BD241A BD242C JESD97

    bd237

    Abstract: BD235 0016114E BD236 BD238 JESD97
    Text: BD235 BD237 NPN power transistors Features • . NPN transistors Applications ■ Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD235 BD237 BD236 BD238 OT-32 O-126) bd237 BD235 0016114E BD238 JESD97

    BD241C

    Abstract: BD241A
    Text: BD241A BD241C NPN power transistors Features • . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD241A BD241C BD242A BD242C. O-220 BD241C BD241A

    D45 TRANSISTOR

    Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual
    Text: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power


    Original     		PDF

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    Untitled

    Abstract: No abstract text available
    Text: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed s ct u d o 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power


    Original     		PDF BUX48 BUX48A BUX48 BUX48A

    2N5192

    Abstract: 2N5191 2n5191 jan 0016114E 2N5195 JESD97
    Text: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF 2N5191 2N5192 2N5192 2N5195. OT-32 2N5191 2n5191 jan 0016114E 2N5195 JESD97

    bd442

    Abstract: BD440
    Text: BD440 BD442 PNP power transistors Features • PNP transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD440 BD442 BD439 BD441. OT-32 BD442 OT-32

    st bd441

    Abstract: bd439 BD441 0016114E BD440 BD442 JESD97
    Text: BD439 BD441 NPN power transistors Features • . NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD439 BD441 BD440 BD442. OT-32 st bd441 bd439 BD441 0016114E BD442 JESD97

    TIP29A

    Abstract: JESD97 TIP29C TIP30A TIP30C TIP29A applications
    Text: TIP29A TIP29C NPN power transistors Features • . NPN transistors Applications ■ Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF TIP29A TIP29C TIP30A TIP30C. O-220 TIP29A JESD97 TIP29C TIP30C TIP29A applications

    BD536

    Abstract: No abstract text available
    Text: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD533 BD535 BD537 BD534 BD536 BD533, BD535, BD537 BD536. BD536

    Untitled

    Abstract: No abstract text available
    Text: TIP29A TIP29C NPN power transistors Features • . NPN transistors Applications ■ Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF TIP29A TIP29C TIP30A TIP30C. O-220

    BD536

    Abstract: BD534 BD537 BD535 BD533 JESD97 BD533 st
    Text: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF BD533 BD535 BD537 BD534 BD536 BD533, BD535, BD537 BD536. BD536 JESD97 BD533 st

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    2n5191 jan

    Abstract: 2N5191
    Text: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ s ct Linear and switching industrial equipment u d o Description r P e The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


    Original     		PDF 2N5191 2N5192 2N5192 2N5195. OT-32 OT-32 2n5191 jan

    BD241A

    Abstract: BD241A-A BD241C JESD97
    Text: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ Audio, general purpose switching and amplifier transistors 1 3 TO-220 Description The devices are manufactured in Planar technology with “Base Island” layout. The


    Original     		PDF BD241A-A O-220 BD241A BD241A BD241A-A BD241C JESD97

    Untitled

    Abstract: No abstract text available
    Text: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ s ct u d o Audio, general purpose switching and amplifier transistors r P e 1 2 3 TO-220 Description The devices are manufactured in Planar


    Original     		PDF BD241A-A O-220 BD241A O-220

    BD244C

    Abstract: BD243C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c
    Text: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


    Original     		PDF BD243C BD244C BD244C. O-220 BD243C BD244C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c

    bd243c

    Abstract: bd244c
    Text: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


    Original     		PDF BD243C BD244C BD244C. O-220 BD243C bd244c

    MC7812Ck

    Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


    OCR Scan     		PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 MC7812Ck MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC

    IGBTs Transistors

    Abstract: igbts
    Text: MÌO ^ Insulated Gate Bipolar Transistor IGBT Insulated Gate Bipolar Transistors (IGBTs from International Rectifier combine the characteristics of established HEXFET power MOSFETs with high-current, low saturation voltage capability of bipolar transistors, and the peak current capability of two larger


    OCR Scan     		PDF 300/1000/1200V IGBTs Transistors igbts