transistor TE 901 equivalent
Abstract: transistor TE 901 IGT6D11 IGT6E11
Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D11
6D11-
transistor TE 901 equivalent
transistor TE 901
IGT6E11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
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RX1214B170W
7/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor
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RZ1214B35Y
127147/00/02/pp8
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xk30
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters
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2SD1614
2SD1614
xk30
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor
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RZ1214B65Y
127147/00/02/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor
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RX1214B300Y
RX1214B300Y
OT439A
7/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor
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BLF1048
SC19a
BLF1048
125108/00/03/pp8
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IEI-1213
Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
Text: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2SD999
2SD999
OT-89
2SB798
IEI-1213
MEI-1202
MF-1134
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
2SB798
5493A
IE1-1209
nec transistor selection guide
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SOT422A
Abstract: BLS3135-65
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES
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BLS3135-65
OT422A
SOT422A
BLS3135-65
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BDP32 PNP medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BDP32
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BDP32
OT223
BDP31.
MAM288
OT223)
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BCP69
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BCP69
OT223
BCP68.
MAM288
OT223)
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES
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BCP68
OT223
BCP69.
MAM287
OT223)
115002/00/03/pp8
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5490A
Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2SB798
2SD999
5490A
B 1359
970-900
2SD999
IEI-1213
MEI-1202
MF-1134
marking dk sot-89
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transistor ph 45 v
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A
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BD330
BD330
BD329.
115002/00/03/pp8
transistor ph 45 v
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2SA1463
Abstract: 2SC3736 MEI-1202 MF-1134
Text: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES
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2SA1463
2SA1463
2SC3736
MEI-1202
MF-1134
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC368 NPN medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium power transistor BC368
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BC368
BC369.
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC369 PNP medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BC369
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BC369
BC368.
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a lastic full pack envelope, he device is intended for use in Switched Mode Power Supplies
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BUK426-200A/B
BUK426
G044125
-200A
-200B
T-39-11
BUK426-200A/B
711002b
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LM 886 IC chip
Abstract: TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature
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BLV2045N
BLV2045N
OT39QA
LM 886 IC chip
TEKELEC te 358
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2SC3046
Abstract: transistor ITT
Text: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.
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2SC3046
2SC3046
transistor ITT
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marking 3t1
Abstract: marking S3 amplifier RV2833B5X
Text: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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RV2833B5X
T-33-N
bS3131
RV2833B5X
Q01S17D
marking 3t1
marking S3 amplifier
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PHT11N06LT
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low
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PHT11N06LT
OT223
OT223.
PHT11N06LT
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S100 transistor
Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
Text: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002h
BUK455-200A/B
T0220AB
buk455
-200a
-200b
Ti/C-150
-ID/100
S100 transistor
BUK455-200A
BUK455-200B
S100
transistor smps circuit
TRANSISTOR BO 345
db40ci0
PHILIPS S100
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2SB1301
Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SB1301
2SB1301
2SD1952
MARKING Z.R
2SD1952
marking zr
IEI-1213
MEI-1202
MF-1134
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