W3H32M72E-XSBX
Abstract: calibration definition
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
W3H32M72E-XSBX
calibration definition
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W3H64M72E-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 17 x 23mm
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W3H64M72E-XSBX
W3H64M72E-XSBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
667Mbs
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 17 x 23mm
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
W3H32M72E-XSBX
667Mbs
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W3H32M72E
Abstract: BA0BA12
Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
533Mbs)
650ps,
-550ps,
500ps.
W3H32M72E
BA0BA12
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
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W3H32M72E
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSBX * 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm
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W3H32M72E-XSBX
667Mbs
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W3H128M72ER-XSBX
Abstract: M2 8gb pinout
Text: White Electronic Designs W3H128M72ER-XSBX PRELIMINARY* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Posted CAS additive latency: 0, 1, 2, 3 or 4 Package: Write latency = Read latency - 1* tCK Commercial, Industrial and Military Temperature
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W3H128M72ER-XSBX
W3H128M72ER-XSBX
M2 8gb pinout
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W3H128M72ER-XSBX
Abstract: LDM-1 W3H128M72
Text: White Electronic Designs W3H128M72ER-XNBX PRELIMINARY* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES Data rate = 667, 533, 400 Mb/s Posted CAS additive latency: 0, 1, 2, 3 or 4 Package: Write latency = Read latency - 1* tCK Commercial, Industrial and Military Temperature
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W3H128M72ER-XNBX
W3H128M72ER-XSBX
LDM-1
W3H128M72
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icc20
Abstract: No abstract text available
Text: White Electronic Designs W3H128M64E-XSBX ADVANCED* 128M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Mb/s Posted CAS additive latency: 0, 1, 2, 3 or 4 Package: Write latency = Read latency - 1* tCK • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H128M64E-XSBX
W3H128M64E-XSBX
CL4-ICC20
icc20
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W3H128M72ER-XSBX
Abstract: 74sstu32864
Text: White Electronic Designs W3H128M72ER-XSBX ADVANCED* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES Data rate = 667, 533, 400 Package: CK/CK# Termination options available • 0 ohm, 20 ohm • 255 Plastic Ball Grid Array PBGA , 22 x 26mm Posted CAS additive latency: 0, 1, 2, 3 or 4
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W3H128M72ER-XSBX
W3H128M72ER-XSBX
74sstu32864
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H128M72E-XNBX ADVANCED* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Mb/s Posted CAS additive latency: 0, 1, 2, 3 or 4 Package: Write latency = Read latency - 1* tCK • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H128M72E-XNBX
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W3H128M72E-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Package: CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Posted CAS additive latency: 0, 1, 2, 3 or 4
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W3H128M72E-XSBX
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W3H128M72E-XSBX
Abstract: 84 FBGA
Text: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Package: CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Posted CAS additive latency: 0, 1, 2, 3 or 4
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W3H128M72E-XSBX
775mA
975mA
-100ps
250ps
350ps
400ps
W3H128M72E-XSBX
84 FBGA
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Untitled
Abstract: No abstract text available
Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D1G1664A
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M14D5121632A
Abstract: M14D512
Text: ESMT Preliminary M14D5121632A (2T) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
M14D512
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Untitled
Abstract: No abstract text available
Text: ESM T M14D2561616A 2L (Preliminary) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D2561616A
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M14D256
Abstract: No abstract text available
Text: ESMT Preliminary M14D2561616A (2L) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D2561616A
M14D256
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Untitled
Abstract: No abstract text available
Text: ESM T M14D128168A 2M DDR II SDRAM 2M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D128168A
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M14D1G166
Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D1G1664A
M14D1G166
m14d1g
M14D1G1664A
m14d1g16
DDRII
esmt
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