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Elite Semiconductor Memory Technology Inc M14D1G1664AS1AG Electronic Component
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ComSIT USA	M14D1G1664AS1AG		836			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Elite Semiconductor Memory Technology Inc M14D1G1664A18BIG2S Electronic Component
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ComSIT USA	M14D1G1664A18BIG2S		209			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Elite Semiconductor Memory Technology Inc M14D1G1664A-2.5BG2S
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Win Source Electronics	M14D1G1664A-2.5BG2S		38,330			1 - 10 - 100 $1.1393 1000 $0.9429 10000 $0.9429	Buy Now

M14D1G16 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
M14D1G166 Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.	Original	PDF	M14D1G1664A M14D1G166 m14d1g M14D1G1664A m14d1g16 DDRII esmt
Untitled Abstract: No abstract text available Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.	Original	PDF	M14D1G1664A
Untitled Abstract: No abstract text available Text: ESMT M14D1G1664A 2D DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.	Original	PDF	M14D1G1664A
Untitled Abstract: No abstract text available Text: ESMT Preliminary M14D1G1664A (2S) DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.	Original	PDF	M14D1G1664A
Untitled Abstract: No abstract text available Text: ESMT Preliminary M14D1G1664A (2S) Automotive Grade DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle	Original	PDF	M14D1G1664A