PN158
Abstract: PNZ158
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ158
PN158)
PN158
PNZ158
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PN158
Abstract: PNZ158
Text: Phototransistors PNZ158 PN158 Silicon NPN Phototransistor Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 2.4 1.5 Fast response : tr = 4 µs (typ.) 12.8 min. Wide spectral sensitivity, suited for detecting various kinds of LEDs Small size, thin side-view type package
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PNZ158
PN158)
PN158
PNZ158
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
PNZ158
PN158)
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2R06
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
PNZ158
PN158)
2R06
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
PNZ158
PN158)
LSTLR102-002
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ158 Silicon NPN Phototransistor Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 2.4 1.5 Fast response : tr = 4 µs typ. 12.8 min. Wide spectral sensitivity, suited for detecting various kinds of LEDs Small size, thin side-view type package
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PNZ158
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LMA2
Abstract: No abstract text available
Text: Phototransistors PNZ158 PN158 Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C 2-0.45±0.15 2-0.45±0.15 1 Parameter Symbol
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PNZ158
PN158)
LMA2
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PN158
Abstract: PNZ158 K50010
Text: Phototransistors PNZ158 PN158 Silicon planar type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) 12.8 min. 2-1.2±0.3 ■ Absolute Maximum Ratings Ta = 25°C 0.45±0.15 2-0.45±0.15 1 Parameter Symbol Rating
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PNZ158
PN158)
PN158
PNZ158
K50010
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ158 PN158 Silicon NPN type For optical control systems Unit: mm 2.9±0.25 (1.2) 4.5±0.3 • Features 0.45±0.15 3.9±0.3 12.8 min. 2-0.45±0.15 1 Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Unit Collector power dissipation
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PNZ158
PN158)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High sensitivity Fast response: tr = 4 s (typ.) Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
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2002/95/EC)
PNZ158
PN158)
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PDF
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PN158
Abstract: PNZ158 K50010
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ158 (PN158) Silicon planar type For optical control systems • Features High sensitivity Fast response: tr = 4 s (typ.) Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
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2002/95/EC)
PNZ158
PN158)
PN158
PNZ158
K50010
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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