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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 4.5±0.15 3.9±0.25 • Features 1.6±0.15 0.8±0.1 12.8 min. (2.95) • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs
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2002/95/EC)
PNZ155
PN155)
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PN155
Abstract: PNZ155 K50010
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ155
PN155)
PN155
PNZ155
K50010
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ155 PN155 Silicon planar type Unit: mm 1.6±0.1 For optical control systems 0.8±0.1 12.8 min. 2-1.2±0.3 0.45±0.15 2-0.45±0.15 • Absolute Maximum Ratings Ta = 25°C Parameter 1.6±0.15 (2.95) 3.9±0.25 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs
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PNZ155
PN155)
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ155 PN155 Silicon planar type Unit: mm 4.5±0.15 3.9±0.25 • Features 1.6±0.15 0.8±0.1 12.8 min. (2.95) • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current • Flat type plastic package
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PNZ155
PN155)
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PN155
Abstract: PNZ155 L1201
Text: Phototransistors PNZ155 PN155 Silicon NPN Phototransistor 1.5±0.2 For optical control systems 3.9±0.25 Features 4.5±0.15 3.5±0.15 High sensitivity 2.1±0.15 1.6±0.15 0.8±0.1 (2.95) Wide spectral sensitivity, suited for detecting GaAs LEDs Not soldered 0.8 max.
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PNZ155
PN155)
PN155
PNZ155
L1201
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ155 Silicon NPN Phototransistor 1.5±0.2 For optical control systems 3.9±0.25 Features 4.5±0.15 3.5±0.15 High sensitivity 2.1±0.15 1.6±0.15 0.8±0.1 2.95 Wide spectral sensitivity, suited for detecting GaAs LEDs Not soldered 0.8 max.
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PNZ155
Characteristi20
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 1.6±0.1 For optical control systems 0.8±0.1 12.8 min. 2-1.2±0.3 0.45±0.15 2-0.45±0.15 • Absolute Maximum Ratings Ta = 25°C Parameter
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2002/95/EC)
PNZ155
PN155)
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PNZ155
Abstract: PN155
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type For optical control systems • Features High sensitivity Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs Low collector-emitter cutoff current (base open)
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2002/95/EC)
PNZ155
PN155)
PNZ155
PN155
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 1.6±0.1 For optical control systems 1.6±0.15 0.8±0.1 12.8 min. (2.95) M Di ain sc te on na tin nc ue e/ d 3.9±0.25 • High sensitivity
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2002/95/EC)
PNZ155
PN155)
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
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CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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