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    PKB3005U Search Results

    PKB3005U Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PKB3005U Philips Semiconductors Microwave Power Transistor Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PKB3005U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)18 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF PKB3005U

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbSS^l DQ150fl3 b PKB3005U MAINTENANCE TYPE J for new design use PVB32005X MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.


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    PDF DQ150fl3 PKB3005U PVB32005X)

    PKB3005U

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE □ bE D bbS3T31 I MAI NTENANCE TYPE for new design use PVB32005X 0015003 PKB3005Ü r-ss-oî? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.


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    PDF PVB32005X) bbS3T31 PKB3005Ã PKB3005U

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11