IC-3394
Abstract: NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µ PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.
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PD4516421,
16M-bit
216-bit
44-pin
50-pin
IC-3394U1
4516421G5-A12
IC-3394
NEC 4516821
PD4516421
UPD4516161G5A10
tsop 66
2M42
4516421G5-A12
4516821G5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description The µPD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank ,
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PD4516421-PC,
4516821-PC,
4516161-PC
16M-bit
4516161-PC
216-bit
44-pin
50-pin
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PDF
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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BA1T12
Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.
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Original
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PDF
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PD4516421,
16M-bit
216-bit
44-pin
50-pin
BA1T12
BA1T11
BA2T13
ba6t17
PD4516161G5
A10 7JF
PD4516821G5
PD4516161
1994P
PD4516421G5
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The PD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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PD4516421
UPD4516421,
UPD4516821,
152-word
576-word
288-word
x16-bit
400-mil
44-pin
400-mil,
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NEC uPD 688
Abstract: CQ-111
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The PD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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uPD4516421
uPD4516821
uPD4516161
UPD4516421,
UPD4516821,
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD 688
CQ-111
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i8085
Abstract: Nec AC 160
Text: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 w o rd xb itx b a n k , re sp e ctiv e ly .
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uPD4516421
uPD4516821
uPD4516161
16M-bit
//PD4516421,
216-bit
576x8x2
44-pin
i8085
Nec AC 160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,
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uPD4516421-PC
uPD4516821-PC
uPD4516161-PC
16M-bit
//PD4516421-PC,
4516821-PC,
4516161-PC
216-bit
44-pin
50-pin
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NEC uPD
Abstract: NEC AND 1994 AND sdram
Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The PD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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OCR Scan
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PDF
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uPD4516421
uPD4516821
uPD4516161
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD
NEC AND 1994 AND sdram
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ' /¿PD4516421A, 4516821 A, 4516161A ; 16M-bit Synchronous DRAM i i j D escrip tio n The//PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access ’ memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
516161A
16M-bit
The//PD4516421
516161A
216-bit
44-pin
50-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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OCR Scan
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PD4516421,
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
S50G5-80-7JF3
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NEC 977
Abstract: No abstract text available
Text: D A T A SHEET NEC MOS INTEGRATED CIRCUIT PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The jj PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random -access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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OCR Scan
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PDF
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uPD4516421
uPD4516821
uPD4516161
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
NEC 977
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A725F
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 w ords by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : /¿PD4516421A are assembled.
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MC-454AA725
72-BIT
MC-454AA725
uPD4516421A
C-454AA725-A80
C-454AA725-A10
A725F
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454BA80 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M
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MC-454BA80
80-BIT
MC-454BA80
PD4516421
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : ¿¿PD4516421 are assembled.
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PDF
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MC-454BA8C
80-BIT
MC-454BA80
uPD4516421
MC-454BA80-A10
MC-454BA80A12
MC-454BA80
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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OCR Scan
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PD4516421,
16M-bit
/iPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
b42755S
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
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PDF
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MC-454BA72
72-BIT
MC-454BA72
uPD4516421
200S-50A4
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a2-xqa
Abstract: IC-3394
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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OCR Scan
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16M-bit
uPD4516421
uPD4516821
uPD4516161
216-bit
44-pin
50-pin
IR35-107-2
VP15-107-2
a2-xqa
IC-3394
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d4516161
Abstract: MPD4516421
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.
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OCR Scan
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PDF
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
44-pin
50-pin
VP15-107-2
IR35-107-2
d4516161
MPD4516421
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A91A
Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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OCR Scan
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uPD4516421A
uPD4516821A
uPD4516161A
16M-bit
PD4516421
516161A
216-bit
44-pin
50-pin
5-80-9N
A91A
uPD4516161AG5-A10-9NF
nec 44pin
NEC 4516821
TNC 24 mk 2
uPD4516161AG5-A80-9NF
uPD4516161AG5-A10
NEC MEMORY
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sm 0038 tsop
Abstract: MC-454BA72F-A10
Text: PRELIMINARY DATA SHEET NEC M O S INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription T h e M C - 4 5 4 B A 7 2 is a 4 ,194,304 w o rd s by 7 2 bits sy n c h ro n o u s dynam ic R A M m odule on w hich 18 p ie ce s of 16 M
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OCR Scan
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PDF
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MC-454BA72
72-BIT
MC-454BA72-A10
MC-53
sm 0038 tsop
MC-454BA72F-A10
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uPD4516161AG5-A80-9NF
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT PD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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OCR Scan
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PDF
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uPD4516421A
uPD4516821A
uPD4516161A
16M-bit
PD4516421
516161A
216-bit
44-pin
50-pin
uPD4516161AG5-A80-9NF
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nec d4516
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The ¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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OCR Scan
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PDF
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uPD4516421
uPD4516821
uPD4516161
16M-bit
tPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
nec d4516
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56OX
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454BA72 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : /¿PD4516421 are assembled.
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OCR Scan
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PDF
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MC-454BA72
72-BIT
MC-454BA72
uPD4516421
-454BA
72-A10
72-A12
56OX
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