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    LA 5530

    Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain


    OCR Scan     		PDF uPA826TF 2SC4959) PA826TF PA826TF59 jPA826TF LA 5530 c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085

    transistor c 3531

    Abstract: UPA826
    Text: PRELIMINARY DATA SHEET PA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:


    OCR Scan     		PDF UPA826TF NE685 UPA826TF PA826TF-T1 24-Hour transistor c 3531 UPA826