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    P-CHANNEL PSPICE MODEL Search Results

    P-CHANNEL PSPICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL PSPICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFD8P06LESM9A

    Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. 175oC RFD8P06LESM9A m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2

    D15P05

    Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
    Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD15P05, RFD15P05SM, RFP15P05 TA09833. TB334 D15P05 RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334

    F15P06

    Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
    Text: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 60V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD15P06, RFD15P06SM, RFP15P06 TA09833. TB334 F15P06 RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334

    40V 60A MOSFET

    Abstract: RFG60P05E TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 40V 60A MOSFET RFG60P05E TB334

    IF9110

    Abstract: IRFR9110 IRFR91109A IRFU9110 TA17541
    Text: IRFU9110, IRFR9110 S E M I C O N D U C T O R 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Features Packaging JEDEC TO-251AA • 3.1A, 100V • rDS ON = 1.200Ω • Temperature Compensating PSPICE Model SOURCE DRAIN GATE


    Original     		PDF IRFU9110, IRFR9110 O-251AA IRFU9110 IRFR9110 31e-10 1e-30 25e-4 03e-6) IF9110 IRFR91109A TA17541

    IF9120

    Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
    Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model


    Original     		PDF IRFU9120, IRFR9120 O-251AA IRFU9120 IRFR9120 235e-12 1e-30 01e-3 05e-6) IF9120 IRFR91209A kp158 623E3 4411E

    RFP15P05

    Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
    Text: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD15P05, RFD15P05SM, RFP15P05 O-220AB O-251AA RFP15P05 1e-30 15e-4 RFD15P05SM RFD15P05 RFD15P05SM9A F15P05

    all mosfet equivalent book

    Abstract: spd30p06p SPD30P06P equivalent SPU30P06P
    Text: PSpice Libraries for p-Channel Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the


    Original     		PDF

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 RFG60P05E TB334

    F15P06

    Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 f15p
    Text: RFD15P06, RFD15P06SM, RFP15P06 S E M I C O N D U C T O R 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 60V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD15P06, RFD15P06SM, RFP15P06 O-220AB O-251AA RFP15P06 1e-30 15e-4 F15P06 RFD15P06 RFD15P06SM RFD15P06SM9A f15p

    if9220

    Abstract: TC227 irfu9220 IRFR9220
    Text: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model


    Original     		PDF IRFR9220, IRFU9220 O-251AA IRFU9220 IRFR9220 170e-12 1e-30 73e-6) 95e-3 if9220 TC227

    50V 60A MOSFET

    Abstract: RFG60P05E 124E-12
    Text: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		PDF RFG60P05E O-247 175oC RFG60P05E 15e-10 1e-30 42e-4 85e-3 69e-6) 50V 60A MOSFET 124E-12

    f1s30p05

    Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris

    RFF60P06

    Abstract: RFG60P06E rfg60p06
    Text: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model


    Original     		PDF RFF60P06 O-254AA 150oC RFF60P06 MIL-STD-750, 150oC, MIL-S-19500, 100ms; 500ms; RFG60P06E rfg60p06

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E O-220AB O-251AA RFD8P06ESM RFP8P06E 49e-10 1e-30 RFD8P06E RFD8P06ESM9A IS415 BV202 D8P06

    RFG60P06E

    Abstract: No abstract text available
    Text: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFG60P06E O-247 175oC RFG60P06E 11e-1 34e-3 46e-12) 15e-10 1e-30

    F1S30P05

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05

    IRFR9120

    Abstract: p-channel pspice model IF9120 TA17501 123E5
    Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF IRFR9120 IRFU9120 IRFR9120 1e-30 05e-6) 23o-3 23e-5) 05e-3 35e-5) p-channel pspice model IF9120 TA17501 123E5

    Untitled

    Abstract: No abstract text available
    Text: RFD15P06, RFD15P06SM, RFP15P06 £11 HARRIS “ ' S ' - ' C ' - ' " * ' 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D E C TO -22ÛAB • 15A, 60V SOURCE • rDS ON = 0.15012 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFD15P06, RFD15P06SM, RFP15P06 15e-4 47e-3 37e-5)

    IF9110

    Abstract: No abstract text available
    Text: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF IRFU9110, IRFR9110 O-251AA 1-200Q IRFU9110 IRFR9110 39e-4 87e-5) 31e-10 1e-30 IF9110

    Untitled

    Abstract: No abstract text available
    Text: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are


    OCR Scan     		PDF RFT1P06E 0-285i2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated


    OCR Scan     		PDF RFG60P05E O-247 11e-1 34e-3TRS2 46e-12) 15e-10 1e-30 42e-4 85e-3

    Untitled

    Abstract: No abstract text available
    Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER


    OCR Scan     		PDF HUF76121SK8 100ms.

    D15P05

    Abstract: RFD15P05 RFP15P05
    Text: in te r« ! RFD15P05, RFD15P05SM, RFP15P05 D a ta S h e e t J u ly 1 9 9 9 15A, SOV, 0.150 Ohm, P-Channel Power MOSFETs Features Formerly developmental type TA09833. PACKAGE * rDS ON = 0-1500 ♦ Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF RFD15P05, RFD15P05SM, RFP15P05 TA09833. RFP1SP05 AN7254 AN7260 D15P05 RFD15P05 RFP15P05