if9220
Abstract: TC227 irfu9220 IRFR9220 TB334
Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
PDF
|
IRFR9220,
IRFU9220
TA17502.
if9220
TC227
irfu9220
IRFR9220
TB334
|
if9220
Abstract: TC227 irfu9220 IRFR9220
Text: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model
|
Original
|
PDF
|
IRFR9220,
IRFU9220
O-251AA
IRFU9220
IRFR9220
170e-12
1e-30
73e-6)
95e-3
if9220
TC227
|
TC227
Abstract: irfu9220 IF9220 IRFR9220 TB334
Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
PDF
|
IRFR9220,
IRFU9220
TA17502.
TC227
irfu9220
IF9220
IRFR9220
TB334
|
TC227
Abstract: No abstract text available
Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
PDF
|
IRFR9220,
IRFU9220
TA17502.
TC227
|
TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
Original
|
PDF
|
IRFR9220,
IRFU9220
TA17502.
TC227
|
TC227
Abstract: TC1327 IF9220
Text: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
|
OCR Scan
|
PDF
|
IRFR9220,
IRFU9220
05e-3
28e-5)
170e-12
1e-30
10TOX
73e-6)
95e-3
TC227
TC1327
IF9220
|
