TDA 7378
Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STD80/STDM80
notice10.
TDA 7378
TDA 7822
block diagram baugh-wooley multiplier
tda 12062
equivalent for tda 4858 ic
free transistor equivalent book
STD-80
4856 a
14 PIN DIP W908
LSI CMOS Technology
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4 BIT 2 INPUT MULTIPLEXER
Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew
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design an 8 Bit ALU using VHDL software tools -FP
Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,
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8051TM
10Kx16-bit
design an 8 Bit ALU using VHDL software tools -FP
AOI221
atmel 0928
OAI221
MX 0541
or03d1
ECPD07
atmel 0532
8 bit barrel shifter vhdl code
AT56K
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iob25hh
Abstract: RAM256X9AA
Text: ProASICPLUS Macro Library Guide R1-2002 Actel Corporation, Sunnyvale, CA 94086 2002 Actel Corporation. All rights reserved. Part Number: 5579016-1 Release: June 2002 No part of this document may be copied or reproduced in any form or by any means without prior written consent of Actel.
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iob25hh
RAM256X9AA
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dram verilog model
Abstract: MC68HC11RM F645D verilog code to generate square wave Verilog code of state machine for 16-byte SRAM 7908 motorola pal spi verilog code 16 bit CISC CPU motorola bubble memory controller MPA1000
Text: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION APPLICATION NOTE 68030 DRAM Controller Design Using Verilog HDL by Phil Rauba, Motorola Field Applications Engineer Purpose This article is intended to give a hardware engineer insight into the design methodology of using the Verilog Hardware
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68ock,
MPA1000
DL201
dram verilog model
MC68HC11RM
F645D
verilog code to generate square wave
Verilog code of state machine for 16-byte SRAM
7908 motorola
pal spi
verilog code 16 bit CISC CPU
motorola bubble memory controller
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AOI21
Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter
Text: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew
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FIFO256X9SSRP
Abstract: iob25hh RAM256X9AA
Text: ProASIC Macro Library Guide November 1999 Actel Corporation, Sunnyvale, CA 94086 ã 1999 Actel Corporation. All rights reserved. Part Number: 5579016-1 Release: November 1999 No part of this document may be copied or reproduced in any form or by any means without prior
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icl 2822
Abstract: 1004CL 0398C BW002 CCGA 472 device dimensional details diode marking B4Z 0844C 4046 PLL Designers Guide AOI2222 2-bit comparator
Text: Preliminary ASIC Cu-11 Databook Notices: Before using this information and the product it supports, be sure to read the general information on the back cover of this book. Trademarks: The following are trademarks or registered trademarks of International Business Machines
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Cu-11
SA14-2449-00
icl 2822
1004CL
0398C
BW002
CCGA 472 device dimensional details
diode marking B4Z
0844C
4046 PLL Designers Guide
AOI2222
2-bit comparator
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iob25hh
Abstract: No abstract text available
Text: ProASIC Macro Library Guide June 1999 Actel Corporation, Sunnyvale, CA 94086 ã 1999 Actel Corporation. All rights reserved. Part Number: 5579016-0 Release: June 1999 No part of this document may be copied or reproduced in any form or by any means without prior
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AOI32
Abstract: BT33 cmos logic databook 2 TO 4 DECODER cmos OAI221 266 XnOR GATE Ao43 cmos databook HIGH VOLTAGE ISOLATION DZ 2101 xnor cmos
Text: ASIC CMOS 5SE Databook Notices: Before using this information and the product it supports, be sure to read the general information on the back cover of this book. Trademarks: The following are trademarks or registered trademarks of International Business Machines Corporation in the United States, or other countries, or both:
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SA14-2212-02R8
AOI32
BT33
cmos logic databook
2 TO 4 DECODER cmos
OAI221
266 XnOR GATE
Ao43
cmos databook
HIGH VOLTAGE ISOLATION DZ 2101
xnor cmos
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TMS 3766
Abstract: transistors 1UW AN1521 ao21 mx618 MX61H AOI21 H4EP012 H4EP044 H4EP171
Text: Order this Data Sheet by H4EP/D MOTOROLA bu SEMICONDUCTOR TECHNICAL DATA H4EPlus SERIES Advanced Information H4EPlus SERIES CMOS ARRAYS The H4EPlus Series arrays offer a fully featured 3.3V, 5V and mixed voltage capable family combined with an increased core density providing over 50% more
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new
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MCR 22-8 transistor power
Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.
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ut161
Abstract: bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21
Text: Radiation-Hardened Semicustom Products UTD-R Gate Array Family Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1990 FEA TU RES □ Total dose 1 x 106 rads Si to this data sheet specification according to M IL-STD-883, M ethod 1019 □ Total dose 1 x 107 rads (Si) functional
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IL-STD-883,
cobalt-60
150mA
500msec
-3-4-90-PD
ut161
bip 373
UT162
AOI13
UT163
half adder circuit using 2*1 multiplexer
G/transistor bip 109
UT169
SCA92
AOI21
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AOI31
Abstract: RSC-15 74LS94 EK-044-9004 ic 74ls83 CSR b4c M240C 4520C M165C bf368
Text: n n EK-044-9004 CMOS Gate Array 5GV Series The RICOH gate array 5GV series complies with the CMOS 1.5/i rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with
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EK-044-9004
RSC-15
74LS165
74LS197
LS240
M390C
M393C
M540C
40I7C
4028C
AOI31
74LS94
EK-044-9004
ic 74ls83
CSR b4c
M240C
4520C
M165C
bf368
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transistor m5c
Abstract: HP900 m5c transistor CMLA01 128160 MSC112 U046 motorola F00
Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock
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CDA 10.7 MC 40
Abstract: No abstract text available
Text: fíOv ¿4 m O rder this Data Sheet by H4C D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PERFORM ANCE T R IP L E LAYER M ETAL The H4C Series is Motorola’s highest performance, sub-micron family of
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kl45B
1PHX33006-4
CDA 10.7 MC 40
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5Bp smd transistor data
Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a
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AOI21
Abstract: OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics
Text: Semicustom Products UTB Series Gate Array Family Preliminary Data Sheet UNITED _ TECHNOLOGIES MICROELECTRONICS ICENTER FEATURES □ D esign ed for m ilitary/aerospace applications - Operating range: —5 5 °C to 1 2 5 ° C - Supply voltage: 5V + 10% - E SD protection: 2001 V m inim um
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150mA
617-890-UTMC
UTB-3-11
-86-DS
AOI21
OAI21
UNITED TECHNOLOGIES MICROELECTRONICS CENTER
nand gate layout
TTL XOR2
operation of sr latch using nor gates
UTB Series
transistor QB
three input OR gate
United Technologies Microelectronics
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OAI221
Abstract: inverter tm 0917 OAI21
Text: Cell-Based 1C Features • • • • • • • Integration of all the elements of a complex electronic system on a single 1C. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMI ARM Thumb , 8051™ ,
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by HDC/D MOTOROLA HDC SERIES SEMICONDUCTOR TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS 1 .0 M IC R O N C M O S A R R A Y S B uilt on a 1.0 m icron, trip le -la y e r metal C M O S process, the HDC
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Transistor mcr 22-8 412
Abstract: No abstract text available
Text: O rd er U lis d a ta s h e e t b y H 4C /D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PER FO R M A N C E T R IP L E LAYER M ETA L The s u b -m ic ro n H 4 C S eries'“ CM O S gate array family and the new
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3300W
Abstract: No abstract text available
Text: Semicustom Products UTB Series Gate Array Family Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER FEA TU RES □ Designed for military/aerospace applications - Operating range: —55 °C to 125° C - Supply voltage: 5V ± 10% - ESD protection: 2001 V minimum
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150mA
-3-11-86-DS
3300W
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AOI21
Abstract: 700J1
Text: UNITE» TECH ME L E C CENTER 4 CIE D <1343^47 O D O l^ b 4 Radiation-Hardened Semicustom Products lUTfl T -V 2 'il-C q UTE-R Array Family Data Sheet UNITED TECH N O LO G IES M ICRO ELECTRO N ICS C EN TER November 1990 FEATURES □ Total dose 1E6 rads Si to this data sheet
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T20ER*
T50ER*
25E-8
Co-60
AOI21
700J1
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