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    NX6351GP Search Results

    NX6351GP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NX6351GP31-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application Visit Renesas Electronics Corporation
    NX6351GP29-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application Visit Renesas Electronics Corporation
    NX6351GP35-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application Visit Renesas Electronics Corporation
    NX6351GP33-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application Visit Renesas Electronics Corporation
    NX6351GP27-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application Visit Renesas Electronics Corporation

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    Text: Preliminary Data Sheet NX6351GP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 DESCRIPTION The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple


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