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    NX6306G Search Results

    NX6306G Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX6306GH NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6306GH NEC 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6306GH-A NEC LASER DIODE LINEAR ARRAY 1335NM 5MW Original PDF
    NX6306GI NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6306GJ NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6306GK NEC 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6306GK NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF

    NX6306G Datasheets Context Search

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    NX5304

    Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor


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    PDF NX6306 NX6306S NX6306G NX5304 NX5306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This


    Original
    PDF NX6306 NX6306S NX6306G

    NX5304

    Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This


    Original
    PDF NX6306 NX6306S NX6306G

    10G EML TOSA

    Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
    Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely


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    PDF acros88-2247 04/2M 10G EML TOSA TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G

    NX6306

    Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
    Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode


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    PDF NX6306 NX6306S NX6306G 6306S NX6306GH NX6306GK NX6306SH NX6306SK

    NX6306

    Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
    Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED:


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    PDF NX6306 NX6306 NX6306G NX6306GH NX6306GI NX6306GJ NX6306GK NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip