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    NX6301G Search Results

    NX6301G Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX6301GH NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6301GH NEC 1310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE (5 mW) Original PDF
    NX6301GH-A NEC LASER DIODE MODULE 1335NM 10MW Original PDF
    NX6301GI NEC 1310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE Original PDF
    NX6301GI NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6301GI-A NEC LASER DIODE MODULE 1335NM 10MW Original PDF
    NX6301GJ NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6301GJ NEC 1310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE (5 mW) Original PDF
    NX6301GK NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF
    NX6301GK NEC 1310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE (5 mW) Original PDF
    NX6301GK-A NEC LASER DIODE MODULE 1335NM 10MW Original PDF

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    A1310

    Abstract: NX6301 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
    Text: PRELIMINARY DATASHEET 1310 nm FOR 156 Mb/s, 622 Mb/s NX6301 InGaAsP MQW-DFB LASER DIODE SERIES IN CAN PACKAGE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR:


    Original     		PDF NX6301 NX6301 STM-4/OC-12 A1310 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK

    NX6301

    Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,


    Original     		PDF NX6301 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK

    NX6301

    Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
    Text: NEC's 1310 nm InGaAsP MQW DFB NX6301 LASER DIODE IN CAN PACKAGE SERIES FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR: 40 dB


    Original     		PDF NX6301 NX6301 STM-4/OC-12 NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GH NX6301GI NX6301GJ NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series


    Original     		PDF NX6301 NX6301S NX6301G

    NX6301

    Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF