NX5315EH Search Results

NX5315EH Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NX5315EH		California Eastern Laboratories	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5315EH		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode		Original	PDF
NX5315EH-A		NEC	LASER DIODE MODULE 1352NM 13MW		Original	PDF
NX5315EH-AZ		California Eastern Laboratories	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5315EH-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications		Original	PDF

NX5315EH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX5315EH Abstract: NX5315EH-AZ Text: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.	Original	PDF	NX5315EH NX5315EH PL10531EJ03V0DS NX5315EH-AZ
Untitled Abstract: No abstract text available Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.	Original	PDF	NX5315EH NX5315EH
NX5315EH Abstract: PX10160E Text: PRELIMINARY DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.	Original	PDF	NX5315EH NX5315EH PX10160E
gpon laser Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
A1276 Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	PDF	NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon
NX5315 Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	PDF	NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	PDF	NX5315