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    NTE542 Price and Stock

    NTE Electronics Inc NTE5429

    Scr Thyristor, 7A, 600V, To-5; Peak Repetitive Off State Voltage:600V; Gate Trigger Current Max:25Ma; Average On State Current:-; On State Rms Current:7A; Thyristor Case Style:To-5; No. Of Pins:3Pins; Holding Current Max:50Ma; Msl:- Rohs Compliant: Yes |Nte Electronics NTE5429
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    NTE Electronics Inc NTE5426

    Scr Thyristor, 10A, 400V, To-220; Peak Repetitive Off State Voltage:400V; Gate Trigger Current Max:200Μa; Average On State Current:-; On State Rms Current:10A; Thyristor Case Style:To-220; No. Of Pins:3Pins; Holding Current Max:3Ma Rohs Compliant: Yes |Nte Electronics NTE5426
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    Bristol Electronics NTE5426 7 2
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    Quest Components NTE5426 6
    • 1 $5.8725
    • 10 $2.9363
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    NTE5426 5
    • 1 $6
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    NTE5426 1
    • 1 $1.54
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    NTE Electronics Inc NTE5427

    Scr Thyristor, 7A, 200V, To-5; Peak Repetitive Off State Voltage:200V; Gate Trigger Current Max:25Ma; Average On State Current:-; On State Rms Current:7A; Thyristor Case Style:To-5; No. Of Pins:3Pins; Holding Current Max:50Ma; Msl:- Rohs Compliant: Yes |Nte Electronics NTE5427
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    Onlinecomponents.com NTE5427 12
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    Quest Components NTE5427 2
    • 1 $11.088
    • 10 $9.24
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    NTE Electronics Inc NTE5424

    Silicon Controlled Rectifier 400vrm 4.7A High Speed TO-220 Case Igt=20ma Power Supply Regulator
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    Onlinecomponents.com NTE5424 13
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    Quest Components NTE5424 2
    • 1 $11.214
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    NTE Electronics Inc NTE5428

    Silicon Controlled Rectifier 400V 7a TO-39 Case Igt=25ma
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    Onlinecomponents.com NTE5428 3
    • 1 $13.9
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    Bristol Electronics NTE5428 3 1
    • 1 $11.2
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    Quest Components NTE5428 2
    • 1 $15
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    NTE542 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE542 NTE Electronics 350mA Iout, 16kV Vrrm General Purpose Silicon Rectifier Scan PDF
    NTE5424 NTE Electronics Silicon Controlled Rectifier (SCR) for TV Power Supply Switching Original PDF
    NTE5426 NTE Electronics Silicon Controlled Rectifier (SCR) Sensitive Gate Original PDF
    NTE5427 NTE Electronics Silicon Controlled Rectifier (SCR) 7 Amp Original PDF
    NTE5428 NTE Electronics Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 7A. Original PDF
    NTE5429 NTE Electronics Silicon Controlled Rectifier (SCR) 7 Amp Original PDF

    NTE542 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCR 30A 400V

    Abstract: NTE5424
    Text: NTE5424 Silicon Controlled Rectifier SCR for TV Power Supply Switching Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high–speed switching applications such as power inverters, switching regulators, and high–current pulse applications. This device features fast turn–off, high dv/dt, and high di/dt characteristics and may be used


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    PDF NTE5424 NTE5424 25kHz. 300mA, 100mA SCR 30A 400V

    NTE5426

    Abstract: 1A 400v scr to220
    Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is


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    PDF NTE5426 NTE5426 150mA 1A 400v scr to220

    SCR 30A 400V

    Abstract: SCR 30A 100V NTE5424
    Text: NTE5424 Silicon Controlled Rectifier SCR for TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high−speed switching applications such as power inverters, switching regulators, and high−current pulse applications. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used


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    PDF NTE5424 NTE5424 25kHz. Repeti50 300mA, 00V/s, -10A/s, 100mA SCR 30A 400V SCR 30A 100V

    NTE5427

    Abstract: 7A 400v scr NTE5428 NTE5429
    Text: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    PDF NTE5427 NTE5429 NTE5427 NTE5428 7A 400v scr NTE5428 NTE5429

    NTE542

    Abstract: No abstract text available
    Text: NTE542 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current350m @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage16k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage14k @I(FM) (A) (Test Condition)350m @Temp. (øC) (Test Condition)50’


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    PDF NTE542 Current350m Voltage16k Voltage14k

    NTE5427

    Abstract: 7A 400v scr NTE5428 NTE5429
    Text: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    PDF NTE5427 NTE5429 NTE5427 NTE5428 7A 400v scr NTE5428 NTE5429

    NTE5426

    Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
    Text: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is


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    PDF NTE5426 NTE5426 150mA 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate

    ic vrm

    Abstract: NTE542
    Text: NTE542 High Voltage Silicon Rectifier, 500mA Features: D Diffused Silicon Junctions D Glass Passivated Junctions D Avalanche Characteristics D Matched Reverse Parameters D Fast Recovery Series D Low Reverse Leakage Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified


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    PDF NTE542 500mA ic vrm NTE542

    HIGH VOLTAGE DIODE for microwave ovens

    Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
    Text: 1994-2012.qxp:QuarkCatalogTempNew 9/11/12 8:55 AM Page 1994 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Comparators, Amplifiers, Diodes, Transient Voltage Suppressors TVS and IGBTs Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.


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    PDF NTE834 NTE922M NTE943M NTE109 NTE525 NTE506 DO-41 DO-41 HIGH VOLTAGE DIODE for microwave ovens NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344

    NTE4017B

    Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


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    PDF NTE397 NTE5552 NTE859 OP27FP P6KE12CA NTE5457 NTE74C14 OP271GP P6KE15A NTE5465 NTE4017B NTE977 IRF 707 NTE7400 NTE4001B NTE5402 NTE997 P405W NTE955M

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


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    PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165

    1V130

    Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


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    PDF NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 1V130 NTE1V095 2V130 1V025 NTE2V480 524V15 524V13 1V150 NTE2V095

    524V13

    Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


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    PDF NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    Untitled

    Abstract: No abstract text available
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


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    PDF NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48

    524V13

    Abstract: 524V25 2V035
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


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    PDF NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V25 2V035

    Untitled

    Abstract: No abstract text available
    Text: SILICON CONTROLLED RECTIFIERS SCR (TV POWER SUPPLY SWITCHING) NTE Type No. 5424 Description and Application High Speed Switch, Power Supply Control Regulator Maximum Ratings Repetitive Peak Forward Off-State Voltage (Volts) RMS On-State Current (Amps) Surge


    OCR Scan
    PDF NTE5424 b431EST

    nte5455

    Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
    Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan
    PDF b431SSci NTE5480 NTE5400 NTE5411 NTE5452 NTE5453 NTE5470 NTE5442 NTE5481 NTE5461 nte5455 nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629

    NTE5405

    Abstract: GT 32 DIAC
    Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan
    PDF NTE5480 NTE5411 NTE5400 NTE5452 NTE5453 NTE5442 NTE5470 NTE5401 NTE5402 NTE5413 NTE5405 GT 32 DIAC