NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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Untitled
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015S
O205AD)
10/20Parameter
10/20m
17-Jul-02
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Untitled
Abstract: No abstract text available
Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015
O205AD)
10/25mParameter
10/25m
17-Jul-02
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Untitled
Abstract: No abstract text available
Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015
O205AD)
10/25m
19-Jun-02
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Untitled
Abstract: No abstract text available
Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015X
O205AD)
10/20Parameter
10/20m
17-Jul-02
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Untitled
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015S
O205AD)
10/20m
19-Jun-02
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2N5015S
Abstract: No abstract text available
Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015S
O205AD)
10/20m
1-Aug-02
2N5015S
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Untitled
Abstract: No abstract text available
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015SX
O205AD)
10/2Parameter
10/20m
17-Jul-02
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2SC2688
Abstract: 2SC2688L NPN Transistor VCEO 1000V
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
2SC2688L
NPN Transistor VCEO 1000V
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2N5015SX
Abstract: 1000v, NPN
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015SX
O205AD)
10/20m
1-Aug-02
2N5015SX
1000v, NPN
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NPN Transistor VCEO 1000V
Abstract: 2SC2688 2SC2688L transistor T 023 XT60
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-K
2SC2688L-x-T60-K
NPN Transistor VCEO 1000V
2SC2688L
transistor T 023
XT60
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2SC2688
Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
O-126
QW-R204-023
NPN Transistor VCEO 1000V
2SC2688L
NPN SILICON TRANSISTOR
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2N5015
Abstract: No abstract text available
Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015
O205AD)
10/25m
1-Aug-02
2N5015
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2N5015X
Abstract: No abstract text available
Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015X
O205AD)
10/20m
1-Aug-02
2N5015X
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Untitled
Abstract: No abstract text available
Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015X
O205AD)
10/20m
19-Jun-02
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Untitled
Abstract: No abstract text available
Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)
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2N5015SX
O205AD)
10/20m
19-Jun-02
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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NPN Transistor VCEO 1000V
Abstract: transistor VCE 1000V
Text: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,
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NTE2313
NTE2313
200mA
500mA,
NPN Transistor VCEO 1000V
transistor VCE 1000V
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transistor VCE 1000V
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:
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NTE2333
NTE2333
130mA,
650mA
600mA,
transistor VCE 1000V
npn 1000V 15A
NPN Transistor VCEO 1000V
300V transistor npn 15a
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NPN Transistor VCEO 1000V
Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:
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NTE2327
NTE2327
100mA,
NPN Transistor VCEO 1000V
250V transistor npn 2a
transistor VCE 1000V
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NPN Transistor VCEO 1000V
Abstract: transistor BUX81/9
Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and
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BUX81
\GRAPHICS\TO204AA
BUX81
204AA
100kHz
NPN Transistor VCEO 1000V
transistor
BUX81/9
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Untitled
Abstract: No abstract text available
Text: J.E.IIZU C/ tj TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power
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BUX85
BUX85
BUX84
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2SC5264
Abstract: 2SC5264LS 2079d
Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
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ENN5287A
2SC5264LS
2079D
2SC5264]
O-220FI
2SC5264
2SC5264LS
2079d
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F463 transistor
Abstract: IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463
Text: 7 ^ 2 3 7 QPS^SQTg SGS-THOMSON iL iO T * ! SGSF463 SGSIF463-SGSF563 S G S - T H O M S ON 3QE ]> FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH SWITCHING SPEED NPN POWER TRANSISTORS . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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02ci2Q?
H33-I3
SGSF463
SGSIF463-SGSF563
70kHz
ISOWATT218
500ms
F463 transistor
IF463
F463
SGSF463
H33-I3
SGSIF463-SGSF563
i f463
npn 1000V 100a
SGS transistors
F-463
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