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Rochester Electronics LLC NNCD6.2E-T1B-A NNCD6.2E-T1B-A - ELECTROSTATIC D
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DigiKey	NNCD6.2E-T1B-A	Bulk			2,404	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Renesas Electronics Corporation NNCD6.2E-T1B-A Electrostatic Discharge Noise Clipping Diodes
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Verical	NNCD6.2E-T1B-A		33,000		2,942	1 - 10 - 100 - 1000 - 10000 $0.1275	Buy Now
Rochester Electronics	NNCD6.2E-T1B-A		33,000		1	1 $0.12 10 $0.12 100 $0.1128 1000 $0.102 10000 $0.102	Buy Now
Renesas Electronics Corporation NNCD6.2E-T1B-A(BW)
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Quest Components	NNCD6.2E-T1B-A(BW)		3,473			1 $0.87 10 $0.87 100 $0.87 1000 $0.261 10000 $0.174	Buy Now

NNCD6.2E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NNCD6.2E		NEC	ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE		Original	PDF

NNCD6.2E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C10535J Abstract: C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	3ENNCD12E IEC1000-4-230 SC-59EIAJ 108-0171NEC 46017NEC 54024NEC C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E
IEC1000 Abstract: IEC1000-42 IEC1000-4-2 NNCD10E NNCD11E NNCD12E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	PDF	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
lg crt monitor circuit diagram Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
smd diode 74a Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915 Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation	Original	PDF	IEC1000-4-2 D11663EJ4V0PF00 smd diode 74a uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
NNCD3.3E Abstract: C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E TF-128 Text: データ・シート静電気ノイズクリッピングダイオード NNCD3.3E~NNCD12E ESD ノイズクリッピング・ダイオード（200 mWタイプ）本製品シリーズは，ESDノイズ保護用に開発したダイオードで外形図（単位：mm）	Original	PDF	3ENNCD12E IEC1000-4-230 SC-59EIAJ D11773JJ2V1DS00 108-0171NEC 46017NEC 54024NEC NNCD3.3E C10535J C10943X IEC1000 NNCD10E NNCD11E NNCD12E NNCD6.2E TF-128
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	PDF	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
RD6.2SB1 Abstract: 1SZ51 1SZ45A 1SZ47 VBR22 1SZ46A 1SZ52 1SZ48 1SZ48A 1SZ50 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	D14712JJ2V0IF002 DEI-603 D14712JJ2V0IF00 FAX044548-7900 RD6.2SB1 1SZ51 1SZ45A 1SZ47 VBR22 1SZ46A 1SZ52 1SZ48 1SZ48A 1SZ50
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
rd6.8a Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P Text: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM	Original	PDF	X13769XJ2V0CD00 RD10UJ RD10UM RD11UJ RD11UM RD12UJ RD12UM RD13UJ RD13UM RD15UJ rd6.8a zener rd9.1esb2 rd5.6b 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	PDF	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
RD5.6C Abstract: RD4.3P RD6,8MW rd4.7s 1SZ47 RD5.1J RD2.4E X13769XJ2V0CD00 RD51P NNCD6.8G Text: CD-ROM版ダイオード CD-ROM X13769XJ2V0CD00 09−1 ダイオードスイッチング・ダイオード • スイッチング・ダイオード絶対最大定格 T A = 25 ℃ 品名外形電気的特性 (TA = 25 ℃) VR (V) IO (mA) I FM (mA) Tj	Original	PDF	X13769XJ2V0CD00 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 RD5.6C RD4.3P RD6,8MW rd4.7s 1SZ47 RD5.1J RD2.4E X13769XJ2V0CD00 RD51P NNCD6.8G
2SC5664 Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation	Original	PDF	D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326

IEC1000 Abstract: IEC1000-42 IEC1000-4-2 NNCD10E NNCD11E NNCD12E NNCD6.2E Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on	Original	PDF	NNCD12E IEC1000-4-2 IEC1000-4- NNCD12E IEC1000 IEC1000-42 NNCD10E NNCD11E NNCD6.2E
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Untitled Abstract: No abstract text available Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on	OCR Scan	PDF	NNCD12E IEC1000-4-2 NNCD12E IEC1000-42)
K1273 Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587 Text: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30	OCR Scan	PDF	SC-59 A1462 2SB624 A1464 B736A K1582 J185W RD36M RD39M RD10FM K1273 K2158 1A4M K1399 K2111 K680A D82C J356 k1587
Nec AC 160 Abstract: NEC D 586 nec 442 Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3E to NNCD12E ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on	OCR Scan	PDF	NNCD12E IEC1000-4-2 NNCD12E Nec AC 160 NEC D 586 nec 442

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NNCD6.2E Search Results

NNCD6.2E Price and Stock

Rochester Electronics LLC NNCD6.2E-T1B-A

Renesas Electronics Corporation NNCD6.2E-T1B-A

Renesas Electronics Corporation NNCD6.2E-T1B-A(BW)

NNCD6.2E Datasheets (1)

NNCD6.2E Datasheets Context Search

C10535J

IEC1000

micro servo 9g

lg crt monitor circuit diagram

2SK2500

smd diode 74a

NNCD3.3E

MICROPROCESSOR Z80

RD6.2SB1

uPD3599

rd6.8a

sc5 s dc 6v relay

RD5.6C

2SC5664

IEC1000

free transistor equivalent book 2sc

Untitled

K1273

Nec AC 160