C5750X7S2A106MT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz
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MRF8S18210WHS
MRF8S18210WHSR3
MRF8S18210WGHSR3
from1805
MRF8S18210WHSR3
C5750X7S2A106MT
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MOSFET J162
Abstract: CW12010T0050G
Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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AFT26H160--4S4
AFT26H160-4S4R3
MOSFET J162
CW12010T0050G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26H160--4S4
AFT26H160-4S4R3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
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AFT21S240--12S
AFT21S240-12SR3
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MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless
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Product Selector Guide
Abstract: NI-400S-2S
Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high
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MMRF2004NBR1ï
MMRF2006NT1ï
1230S--4L2L
NI--780GS--4L
NI--880XGS--2L
NI--1230H--4S
NI--1230S--4S4S
OM--780--2L
OM--780G--2L
OM--780--4L
Product Selector Guide
NI-400S-2S
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ATC100B1R8BT500XT
Abstract: c5750x7s2a106mt J584 ATC100B3R9BT500XT J406 NI880xs NI-880XS-2 J426
Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors MRF8S18210WHSR3 MRF8S18210WGHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz
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MRF8S18210WHS
from1805
MRF8S18210WHSR3
MRF8S18210WGHSR3
MRF8S18210WHS
ATC100B1R8BT500XT
c5750x7s2a106mt
J584
ATC100B3R9BT500XT
J406
NI880xs
NI-880XS-2
J426
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