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    NGB8207NT4G Search Results

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    NGB8207NT4G Price and Stock

    Rochester Electronics LLC NGB8207NT4G

    IGBT 365V 20A D2PAK
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    DigiKey NGB8207NT4G Bulk 245
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    onsemi NGB8207NT4G

    IGBT 365V 20A 165W D2PAK
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    DigiKey NGB8207NT4G Reel 800
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    Rochester Electronics NGB8207NT4G 2,400 1
    • 1 $1.18
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    Aptina Imaging NGB8207NT4G

    Trans IGBT Chip N-CH 365V 20A 165000mW 3-Pin(2+Tab) D2PAK T/R
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    Verical NGB8207NT4G 2,400 271
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    NGB8207NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGB8207NT4G On Semiconductor Ignition IGBT 20 A, 365 V, N-Channel D2PAK Original PDF

    NGB8207NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NGB8207B

    Abstract: No abstract text available
    Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    PDF NGB8207N, NGB8207BN NGB8207N/D NGB8207B

    8207NG

    Abstract: AYWW marking code IC
    Text: NGB8207N Product Preview Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    PDF NGB8207N NGB8207N/D 8207NG AYWW marking code IC

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original
    PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    1505C

    Abstract: 405C NGB8207N NGB8207NT4G 8207NG
    Text: NGB8207N Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original
    PDF NGB8207N NGB8207N/D 1505C 405C NGB8207N NGB8207NT4G 8207NG

    Untitled

    Abstract: No abstract text available
    Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    PDF NGB8207N, NGB8207BN NGB8207N/D