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    NE900 Price and Stock

    SiTime Corporation SIT3372AC-1E2-28NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-1E2-28NE90.000000 1
    • 1 $13.01
    • 10 $12.168
    • 100 $11.3291
    • 1000 $11.16124
    • 10000 $11.16124
    		Buy Now

    SiTime Corporation SIT3372AC-1E3-30NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-1E3-30NE90.000000 1
    • 1 $9.9
    • 10 $9.285
    • 100 $8.6656
    • 1000 $7.73718
    • 10000 $7.73718
    		Buy Now

    SiTime Corporation SIT3372AI-2B2-28NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-2B2-28NE90.000000 1
    • 1 $13.29
    • 10 $12.432
    • 100 $11.5745
    • 1000 $11.40304
    • 10000 $11.40304
    		Buy Now

    SiTime Corporation SIT3372AI-2B3-30NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-2B3-30NE90.000000 1
    • 1 $10.19
    • 10 $9.557
    • 100 $8.9202
    • 1000 $7.96443
    • 10000 $7.96443
    		Buy Now

    SiTime Corporation SIT3372AI-4B3-25NE90.000000

    MEMS OSC VCXO 90.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-4B3-25NE90.000000 1
    • 1 $10.19
    • 10 $9.557
    • 100 $8.9202
    • 1000 $7.96443
    • 10000 $7.96443
    		Buy Now
    Find more NE900 price and stock on Findchips.com

    NE900 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE9000 NEC Ku-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE900089A NEC Ku-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE9001 NEC Ku-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE9002 NEC Ku-BAND MEDIUM POWER GaAs MESFET Original PDF

    NE900 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE900275

    Abstract: NE900175 ne900075 NE900200 S50240 NE900100G NE9002 ne900 NE9001 NE900000
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain dB • • DESCRIPTION


    Original     		PDF NE9000 NE9001 NE9002 NE9000, NE9001, NE900000, NE900100, NE900200, NE900275 NE900175 ne900075 NE900200 S50240 NE900100G ne900 NE900000

    NE900474-13

    Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
    Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001


    Original     		PDF NE9004 NE900474-13, NE9004 NE900 NE9000, NE9001 NE9002. 24-Hour NE900474-13 NE900474-15 NE900400G NE9002 AN-1001 NE9000 NE9001 UM1000

    Untitled

    Abstract: No abstract text available
    Text: NE900873-13 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ


    Original     		PDF NE900873-13

    Untitled

    Abstract: No abstract text available
    Text: NE900873-15 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ


    Original     		PDF NE900873-15

    Untitled

    Abstract: No abstract text available
    Text: NE900873-12 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ


    Original     		PDF NE900873-12

    Untitled

    Abstract: No abstract text available
    Text: NE900873-14 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ


    Original     		PDF NE900873-14

    NE9004

    Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
    Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS


    Original     		PDF NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900

    NE900089A

    Abstract: 24-hour diode marking 89a marking 34 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS Packaging Schematic
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 89A 2.03 ± 0.2 4.0 MIN ALL LEADS S 0.51 D G MARKING S 1.02 1.6 MAX 0.1 PART NUMBER NE900089A EXCLUSIVE NORTH AMERICAN AGENT FOR MARKING


    Original     		PDF NE900089A 24-Hour NE900089A diode marking 89a marking 34 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS Packaging Schematic

    Untitled

    Abstract: No abstract text available
    Text: NE900873-11 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-9 I(D) Max. (A)2.4 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.2 I(DSS) Max. (A)2.4 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.400mÂ


    Original     		PDF NE900873-11

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE900275

    Abstract: NE900175 ne900075 3232 marking RF 98 NE9000
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 75 +0.15 -0.05 2 PLACES f 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX 2.85 1.13 0.9 MAX


    Original     		PDF NE900075 NE900175 NE900275 24-Hour NE900275 NE900175 ne900075 3232 marking RF 98 NE9000

    NE900474-15

    Abstract: NE900474-13 NE9004 NE900474 marking 34
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 74 YEAR INDICATOR +0.15 f 1.8 -0.05 2 PLACES R 0.25, 4 PLACES GATE 0.5 TYP 3.0 MIN SOURCE 3.5±0.3 MARKING MONTH INDICATOR B 3.1±0.1


    Original     		PDF NE900474-13 NE900474-15 988-027INDICATOR 24-Hour NE900474-15 NE900474-13 NE9004 NE900474 marking 34

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    NE900175

    Abstract: No abstract text available
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES TYPICAL UNEAR GAIN vs. FREQUENCY • CLASS A OPERATION • HIGH OUTPUT POWER 3 o u t = 26.5 dBm 3idB - 7 dB • HIGH POWER ADDED EFFICIENCY DESCRIPTION The NE9000, N E 9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		PDF NE9000 NE9001 NE9002 NE9000, E900100, E900200, E900000, E900200 NE900175

    NE900474-15

    Abstract: NE900474 NE900474-13 14012 cl NE9004 NE900400G DS 45-800
    Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED


    OCR Scan     		PDF NE9004 NE900474-13 NE9001 AN-1001 NE900474-15 NE900474 14012 cl NE900400G DS 45-800

    NE9004

    Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
    Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED


    OCR Scan     		PDF NE9004 NE900474-13 NE900 NE9000, NE9001 NE9002. AN-1001 L427525 NE900400 NE900474-15 NE900400G MC 88000

    NE900275

    Abstract: NE9002
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		PDF NE9000 NE9001 NE9002 NE9000, NE9001, theNE900000, NE900100, NE900200, NE900000, NE900275

    NE900474-13

    Abstract: ne900474-15 NE9004 NE900474 NE900400G NE900400
    Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13, <15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED


    OCR Scan     		PDF NE9004 NE900474-13, E9004 E9000, NE9001 NE9002. AN-1001 NE900474-13 ne900474-15 NE900474 NE900400G NE900400

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    ne900075

    Abstract: NE9000
    Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27


    OCR Scan     		PDF NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000

    NE8002

    Abstract: NE800196 NE800 E8500 NE9001
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D


    OCR Scan     		PDF 542-15D NEZS964-1SDD NEZ7785-15D/DD NEZ4450-15D/DD NEZ3642-8D NEZ6472-1S NEZ7177-8D/DD NEZ5984-8D/DD NEZ4450-8D/DD NEZ8472-8P/DD NE8002 NE800196 NE800 E8500 NE9001

    NE800495-4

    Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D


    OCR Scan     		PDF NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196