NE76100
Abstract: NE76100M NE76100N
Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of
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NE76100
NE76100
NE76100N
NE76100M
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NE76100M
NE76100N
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NE76100
Abstract: NE76100M NE76100N
Text: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure
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NE76100
NE76100
NE76100N
NE76100M
24-Hour
NE76100M
NE76100N
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equivalent 4435
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, los = 10 m A FEATURES LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 G Hz CO TJ HIGH ASSOCIATED GAIN: G a = 12.0 dB typical at f = 4 GHz Lq = 1.0 j.m , Wg = 400 (im
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NE76100
NE76100
E76100
lS22l
NE76100N
NE76100P
equivalent 4435
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_
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NE76100
IS12S21I
NE76100
140nm
NE76100N
NE76100M
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4435 ag
Abstract: 5q 1265 rf
Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz
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NE76100
E76100
NE76100
NE76100N
NE76100M
4435 ag
5q 1265 rf
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