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    NE416 Price and Stock

    ABB Low Voltage Products and Systems XT3NE4160NFF000XXX (ALTERNATE: 1SDA068262R1)

    XT3N 250 TMG 160-480 4P FF N=100PCT | ABB XT3NE4160NFF000XXX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS XT3NE4160NFF000XXX (ALTERNATE: 1SDA068262R1) Bulk 1
    • 1 $1206.14
    • 10 $1145.84
    • 100 $1145.84
    • 1000 $1145.84
    • 10000 $1145.84
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    NEC Electronics Group NE41603

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NE41603 153
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    California Eastern Laboratories (CEL) NE41612-1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE41612-1 160
    • 1 $76.05
    • 10 $76.05
    • 100 $64.35
    • 1000 $61.425
    • 10000 $61.425
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    LUMEL SA BA271NE4160000

    Ammeter; on panel; I AC: 0÷100A; Class: 3; 300V; BA27; 72x72x64mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BA271NE4160000 3 1
    • 1 $33.74
    • 10 $31.58
    • 100 $31.58
    • 1000 $31.58
    • 10000 $31.58
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    LUMEL SA EA19N E41600000000

    Ammeter; on panel; I AC: 0÷100A; True RMS; Class: 1.5; 40÷72Hz; 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME EA19N E41600000000 2 1
    • 1 $25.91
    • 10 $24.05
    • 100 $24.05
    • 1000 $24.05
    • 10000 $24.05
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    Find more NE416 price and stock on Findchips.com

    NE416 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE416 NEC NPN MEDIUM POWER UHF-VHF TRANSISTOR Scan PDF
    NE41600 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41603 Unknown Transistor Replacements Scan PDF
    NE41603 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41603 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41607 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41607 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41610 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41612 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41612 NEC NPN Medium Power UHF-VHF Transistor Scan PDF
    NE41612 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE416121 NEC NPN Medium Power UHF-VHF Transistor Scan PDF
    NE41615 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41615 NEC NPN Medium Power UHF-VHF Transistor Scan PDF
    NE41615 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41620 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE41620 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41632-1 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41632-2 NEC 35 V, NPN medium power UHF-VHF transistor Scan PDF
    NE41635 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    NE416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE41615

    Abstract: No abstract text available
    Text: NE41615 NPN SILICON RF MEDIUM POWER TRANSISTOR DESCRIPTION: The ASI NE41615 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE TO- 33 FEATURES INCLUDE: • Gold Metelization • Emitter Ballast Resistors • Low Noise MAXIMUM RATINGS


    Original     		PDF NE41615 NE41615

    Untitled

    Abstract: No abstract text available
    Text: NE41632-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)20


    Original     		PDF NE41632-2

    NE41635

    Abstract: No abstract text available
    Text: NE41635 NPN SILICON RF MEDIUM POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .100 4L The ASI NE41635 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE: • Emitter Ballast Resistors • Low Noise MAXIMUM RATINGS IC 100 mA VCBO


    Original     		PDF NE41635 NE41635 S21E2

    Untitled

    Abstract: No abstract text available
    Text: NE41603 NPN SILICON RF MEDIUM POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .100 4L The ASI NE41603 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE: • Emitter Ballast Resistors • Low Noise MAXIMUM RATINGS IC 100 mA VCBO


    Original     		PDF NE41603 NE41603

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    NE41634

    Abstract: NE46134 2SC4536 AN-1001 NE46100 S21E 7100D
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		PDF NE46100 NE46134 NE461 24-Hour NE41634 NE46134 2SC4536 AN-1001 NE46100 S21E 7100D

    NE46134

    Abstract: NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel
    Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original     		PDF NE46100 NE46134 NE461 NE46134-T1 NE46134 NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel

    NE46134-T1

    Abstract: No abstract text available
    Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high


    Original     		PDF NE46100 NE46134 NE46134 NE461 NE46100, OT-89) NE46134-T1

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    NE56755

    Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s

    NE41607

    Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
    Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e


    OCR Scan     		PDF b427mM NE416 NE41635 DE161 NE41607 NC921 Z171 NE41600 2SC2025 50m1n NE41615 Z128

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


    OCR Scan     		PDF L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592

    2SC2407 equivalent

    Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The


    OCR Scan     		PDF L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600

    Transistor CD 7810

    Abstract: transistor c 5855 NE41600 cy 1815
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 7 0 M H z • HIGH RELIABILITY METALLIZATION • LINEAR POWER OUTPUT: 200 mW at 2 G H z • LOW COST DESCRIPTION_ T h e N E 4 1 6 s e rie s of N P N tra n s is to rs is o n e of N E C 's m ost


    OCR Scan     		PDF NE416 Transistor CD 7810 transistor c 5855 NE41600 cy 1815

    NC921

    Abstract: ne41635 NE41607 NE41612-1
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 70 MHz linearity. The NE416 series is available in a wide selection of package styles and in chip form for thin and thick film circuits. Most package styles are available with screening levels through


    OCR Scan     		PDF NE416 NC921 ne41635 NE41607 NE41612-1

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 OT-89) 160jj NE46134-T1 24-Hour

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent

    NE88933

    Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039
    Text: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj |3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl | | i | | | I in a»iiSr# *W =BP*>8 AiS SiiSf*K f a ll * t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)


    OCR Scan     		PDF NE21935 NE645 NE64535 Nh680 NL68030 NE416 NE41635 NE461 NE46134 NE46734 NE88933 ne85639 NFC46 NE57835 NE68033 NE68035 NE68039

    UPC2712B

    Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
    Text: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E


    OCR Scan     		PDF GET-30698 NE89400 UPB584B 10Cycies Page31 NE02100 Page35/37 UPC1677P 1678P UPC2712B UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent