Untitled
Abstract: No abstract text available
Text: NDP606BL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ
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NDP606BL
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect
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NDP605A/NDP605B,
NDP606A/NDP606B
NDP605B
NDP606B
NOP605B
TL/G/11112-3
TL/G/11112-4
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NDP605A
Abstract: ndp605A TO-220 NDP606A 025X C1995 NDP605B NDP606B 048X0 MX60
Text: NDP605A NDP605B NDP606A NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary high cell density DMOS technology This very high density process has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulses in the avalanche and commutation
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NDP605A
NDP605B
NDP606A
NDP606B
ndp605A TO-220
025X
C1995
NDP606B
048X0
MX60
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Untitled
Abstract: No abstract text available
Text: NDP606BEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ
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NDP606BEL
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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NDS9945
Abstract: 20W Solenoid Driver 5V GATE TO SOURCE VOLTAGE MOSFET NDP706A Automatic Valve Systems parallel MOSFET Transistors parallel mosfet cgs resistor control circuit for mosfet to turn on and off Deutsch time delay Relays
Text: LM9061 Power MOSFET Driver with Lossless Protection General Description Features The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch A CMOS logic compatible ON OFF input controls the output gate drive voltage In the
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LM9061
LM9061
NDS9945
20W Solenoid Driver
5V GATE TO SOURCE VOLTAGE MOSFET
NDP706A
Automatic Valve Systems
parallel MOSFET Transistors
parallel mosfet
cgs resistor
control circuit for mosfet to turn on and off
Deutsch time delay Relays
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Untitled
Abstract: No abstract text available
Text: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the
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LM9061
5-Aug-2002]
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20W Solenoid Driver
Abstract: LM9061 LM9061M LM9061N M08A NDB708A NDP706A NDP706B NDP708A MOSFETs Application Hints
Text: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the
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LM9061
LM9061
20W Solenoid Driver
LM9061M
LM9061N
M08A
NDB708A
NDP706A
NDP706B
NDP708A
MOSFETs Application Hints
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ndp706b
Abstract: PWM power motor driver NDS9945
Text: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the
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LM9061
ndp706b
PWM power motor driver
NDS9945
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NDP406BL
Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5
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OCR Scan
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O-220AB
NDP710AEL
NDP710AL
NDP710BEL
NDP710BL
NDP610AEL
NDP610AL
NDP610BEL
NDP610BL
NDP510AEL
NDP406BL
NDP508AEL
MTP3055EL
ndp706al
NDP606AL
NDP405BL
NDP605AL
NDP405AL
NDP510AL
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ndp606a
Abstract: No abstract text available
Text: National Semiconductor March 1993 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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OCR Scan
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NDP605A/NDP605B,
NDP606A/NDP606B
ndp606a
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78017
Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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OCR Scan
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NDP605A/NDP605B,
NDP606A/NDP606B
LSQ1130
78017
7S1 zener diode
NDP605A
NDP605B
NDP606A
NDP606B
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B5G1
Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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OCR Scan
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NDP605A/NDP605B,
NDP606A/NDP606B
0-1B0-534
B5G1
ndp605A TO-220
NDP606A
NDP605A
NDP605B
NDP606B
zener diode u41
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NDP505A
Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80
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O-220AB
NDP710A
NDP710AE
NDP710B
NDP710BE
NDP610A
NDP610AE
NDP610B
NDP610BE
NDP510A
NDP505A
NDP705AE
NDP605A
NDP405B
NDP510AE
NDP510B
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