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Fairchild Semiconductor Corporation NDH853N 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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Quest Components	NDH853N		631			1 $1.5 10 $1.5 100 $0.7 1000 $0.625 10000 $0.625	Buy Now

NDH853N Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDH853N		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDH853N		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
NDH853N		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF

NDH853N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1B10M Abstract: NDH853N Text: May 1997 NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDH853N NDH853N 1B10M	PDF
NDH853N Abstract: No abstract text available Text: N August 1996 PRELIMINARY NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	Original	NDH853N NDH853N	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
Untitled Abstract: No abstract text available Text: RAIRCHII-D May 1997 M ICDNDUCTO R i NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode Features power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDH853N NDH853N	PDF
NDH853N Abstract: No abstract text available Text: FAIRCHILD iM IC O N D U C T D R „ May 1997 tm NDH853N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect • 7.6 A, 30 V. RDS ON = 0.017 Q. @ VGS = 10 V transistors are produced using Fairchild's proprietary, high cell	OCR Scan	NDH853N NDH853N	PDF
Untitled Abstract: No abstract text available Text: FAIRCHILD ¡M IC D N D U C T D R May tm NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel Features enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDH853N	PDF
NDT453N Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W \| Part Num ber Remarks \| M ax ( fi) V « v „s IV) 10V 4.5V P, \|W \|	OCR Scan	T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N	PDF