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onsemi NDH8436 MOSFET N-CH 30V 5.8A SUPERSOT8
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DigiKey	NDH8436	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.77175	Buy Now

NDH8436 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDH8436		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDH8436		National Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDH8436		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
NDH8436		Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF
NDH8436		National Semiconductor	Single P-Channel Enhancement Mode Field Effect Transistor		Scan	PDF

NDH8436 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NDH8436 Abstract: No abstract text available Text: N May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	Original	NDH8436 NDH8436	PDF
sot8 Abstract: NDH8436 Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDH8436 NDH8436 sot8	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor	PDF
Untitled Abstract: No abstract text available Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect - transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDH8436 NDH8436	PDF
sot8 Abstract: NDH8436 sot-8 Text: N March 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription These N -C h a n n e l Features enhancem ent m ode pow er field effect - density, D M O S tech nology. T h is v e ry high density process is esp ecially tailored to	OCR Scan	NDH8436 NDH8436 sot8 sot-8	PDF
6c2 diode Abstract: NDH8436 Text: e i Na t i o n a l Semiconductor" May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDH8436 bS01130 6c2 diode	PDF
IC-255 Abstract: 1Ft SOT-363-6 Text: P A IR C H IL D March 1996 S E M IC O N D U C T O R tm NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell	OCR Scan	NDH8436 IC-255 1Ft SOT-363-6	PDF
NDT453N Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W \| Part Num ber Remarks \| M ax ( fi) V « v „s IV) 10V 4.5V P, \|W \|	OCR Scan	T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N	PDF