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    NBRB8H100T4G Price and Stock

    onsemi NBRB8H100T4G

    DIODE SCHOTTKY 100V 8A D2PAK
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    DigiKey NBRB8H100T4G Digi-Reel 1
    • 1 $1.48
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    NBRB8H100T4G Cut Tape
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    Newark NBRB8H100T4G Reel 800
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    Bristol Electronics NBRB8H100T4G 795
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    Rochester Electronics NBRB8H100T4G 1
    • 1 $0.6475
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    • 100 $0.6086
    • 1000 $0.5504
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    NBRB8H100T4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NBRB8H100T4G On Semiconductor NBRB8H100 - DIODE RECTIFIER DIODE, Rectifier Diode Original PDF

    NBRB8H100T4G Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D

    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G MBRB8H100/D

    b8h100g

    Abstract: B8H100
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D b8h100g B8H100