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    TIM5964-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM5964-4 2-11D1B) MW50690196 TIM5964-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM5964-4 MW50690196 TDT72SD 00224flb TIM5964-4 Q02EMfl7 PDF