| TIM5964-4 |
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Toshiba
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TIM5964 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power |
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Original |
PDF
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| TIM5964-4 |
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Toshiba
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Internally Matched Power GaAs FET (C-Band) |
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Original |
PDF
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| TIM5964-4-251 |
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Toshiba
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MICROWAVE POWER GaAs FET |
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Scan |
PDF
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| TIM5964-45SL |
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Toshiba
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C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 46.5; G1dB (dB): 9; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.8; Package Type: 2-16G1B |
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Original |
PDF
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| TIM5964-45SL |
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Toshiba
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Microwave Power GaAs FET |
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Scan |
PDF
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| TIM5964-45SL |
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Toshiba
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Scan |
PDF
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| TIM5964-4A |
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Toshiba
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MICROWAVE POWER GaAs FET |
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Scan |
PDF
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| TIM5964-4A |
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Toshiba
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MICROWAVE POWER GaAs FET |
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Scan |
PDF
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| TIM5964-4L |
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Toshiba
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Low Distortion Internally Matched Power GaAs FET (C-Band) |
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Original |
PDF
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| TIM5964-4SL |
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Toshiba
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TIM5964 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power |
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Original |
PDF
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| TIM5964-4SL |
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Toshiba
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Microwave Power GaAs FET |
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Scan |
PDF
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| TIM5964-4SL |
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Toshiba
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Scan |
PDF
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| TIM5964-4SL-422 |
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Toshiba
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MICROWAVE POWER GaAs FET |
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Original |
PDF
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| TIM5964-4UL |
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Toshiba
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MICROWAVE POWER GaAs FET |
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Original |
PDF
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