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onsemi MTP3N60E Tmo Spwr 600V .5R To220 \|Onsemi MTP3N60E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MTP3N60E	Bulk			550	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SGS Thomson MTP3N60FI 2.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTP3N60FI		9			1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics MTP3N60FI 2.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTP3N60FI		1			1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	MTP3N60FI		94			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Mobility LLC MTP3N60E 3A, 600V, 2.2ohm, N-Channel Power MOSFET, TO-220AB '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MTP3N60E		2		1	1 $0.5633 10 $0.5633 100 $0.5295 1000 $0.4788 10000 $0.4788	Buy Now

MTP3N6 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP3N60	STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF
MTP3N60	STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor	Original	PDF
MTP3N60	Motorola	Switchmode Datasheet	Scan	PDF
MTP3N60	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP3N60	Motorola	(MTP3N55) Power Field Effect Transistor	Scan	PDF
MTP3N60	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP3N60	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTP3N60	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP3N60	Unknown	FET Data Book	Scan	PDF
MTP3N60	Semiconductor Technology	High Voltage MOS Power Field Effect Transistors	Scan	PDF
MTP3N60	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
MTP3N60E	Motorola	TMOS E-FET High Density Power FET	Original	PDF
MTP3N60E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP3N60E	Motorola	TMOS Power FET 3.0 Amperes 600 Amperes 600 Volts	Scan	PDF

MTP3N60E	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP3N60E	Unknown	FET Data Book	Scan	PDF
MTP3N60E	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, 1.5A, Pkg Style TO220AB	Scan	PDF
MTP3N60E/D	On Semiconductor	TMOS POWER FET 3.0 AMPERES 600 VOLTS	Original	PDF
MTP3N60E-D	On Semiconductor	TMOS E-FET High Energy Power FET N-Channel Enhanc	Original	PDF
MTP3N60FI	STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF

MTP3N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP3N60 O-220
mtp3n6 Abstract: mosfet 600V 30A Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP3N60E mtp3n6 mosfet 600V 30A
MTP3N60 Abstract: MTP3N6 MTP3N60FI Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	PDF	MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N6 MTP3N60FI
mtp3n6 Abstract: No abstract text available Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A	Original	PDF	MTP3N60 MTP3N60FI 100QC O-220 ISOWATT220 100ms mtp3n6
Untitled Abstract: No abstract text available Text: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS	Original	PDF	MTM3N60 MTP3N55 MTP3N60 104AA
2N3904 Abstract: AN569 MTP3N60E Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS	Original	PDF	MTP3N60E/D MTP3N60E MTP3N60E/D* 2N3904 AN569 MTP3N60E
mtp3n6 Abstract: No abstract text available Text: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast	Original	PDF	MTP3N60E MTP3N60E/D mtp3n6
MTP3N60 Abstract: MTP3N60FI MTP3N6 Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	PDF	MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N60FI MTP3N6
MTP3N6 Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS	Original	PDF	MTP3N60E/D MTP3N60E MTP3N6 MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
MTP3N60 Abstract: MTP3N60FI MTP3N6 Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	PDF	MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N60FI MTP3N6
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

NPC-1200 Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad Text: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output	Original	PDF	AND8023/D NCP1200 r14525 NPC-1200 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
Untitled Abstract: No abstract text available Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	PDF	MTP3N60 MTP3N60FI MTP3N60/FI ISQWATT220
TP3N55 Abstract: No abstract text available Text: M O T O RO LA SC XSTRS/R F m e I .0 t.3 t,7 E S 4 0 0 0 ^ 7 0 Ö I MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FETs	OCR Scan	PDF	O-220AB 204AA TP3N55
MTP3N60FI Abstract: No abstract text available Text: ^ 7 SGS-THOMSON MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Voss ^OS on •d MTP3N60 MTP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VOLTAGE FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR	OCR Scan	PDF	MTP3N60 MTP3N60FI 10OKHz O-220 ISQWATT220 500ms MTP3N60FI
MTP3N6 Abstract: No abstract text available Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS	OCR Scan	PDF	MTP3N60 MTP3N60FI TP3N60 TP3N60FI 100KHz ATT22Q 500ms MTP3N6
Untitled Abstract: No abstract text available Text: * 5 SGS-THOMSON ilLiCTIKMDe 7 mTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	PDF	mTP3N60 MTP3N60FI TP3N60 TP3N60FI MTP3N60FI
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to	OCR Scan	PDF	MTP3N60E/D 21A-09
MTM3N60 Abstract: MTP3N55 p3nb 221A-04 25CC AN569 MTP3N60 Text: MOTOROLA SEM ICON D UCTO R TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancem ent-M ode Silico n Gate TM OS TM OS POWER FETs 3 AM PERES T h e se T M O S Po w er F E T s are designed for high vo ltage, high	OCR Scan	PDF	MTM3N60 MTP3N55 MTP3N60 MTM3N60its p3nb 221A-04 25CC AN569 MTP3N60
mtp3n Abstract: TP3N60 A1412 Text: Si TYPE . MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss MTP3N60 MTP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	PDF	MTP3N60 MTP3N60FI MTP3N60/FI mtp3n TP3N60 A1412
MTP2P45 Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85 Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5	OCR Scan	PDF	O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85

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MTP3N6 Search Results

MTP3N6 Price and Stock

onsemi MTP3N60E

SGS Thomson MTP3N60FI

STMicroelectronics MTP3N60FI

Motorola Mobility LLC MTP3N60E

MTP3N6 Datasheets (24)

MTP3N6 Datasheets Context Search

Untitled

mtp3n6

MTP3N60

mtp3n6

Untitled

2N3904

mtp3n6

MTP3N60

MTP3N6

MTP3N60

MC68B21CP

mosfet cross reference

sn76131

fqp60n06

NPC-1200

Untitled

TP3N55

MTP3N60FI

MTP3N6

Untitled

Untitled

MTM3N60

mtp3n

MTP2P45