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Rochester Electronics LLC MTP1N60E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTP1N60E	Bulk			888	1 - 10 - 100 - 1000 $0.34 10000 $0.34	Buy Now
Aptina Imaging MTP1N60E Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) TO-220AB Rail
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Verical	MTP1N60E		20,578		1,086	1 - 10 - 100 - 1000 - 10000 $0.3454	Buy Now
onsemi MTP1N60E
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Bristol Electronics	MTP1N60E		188			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	MTP1N60E		20,578		1	1 $0.325 10 $0.325 100 $0.3055 1000 $0.2763 10000 $0.2763	Buy Now
onsemi MTP1N100E
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Bristol Electronics	MTP1N100E		14			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTP1N100E TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,1A I(D),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MTP1N100E		144			1 $4.62 10 $2.31 100 $2.002 1000 $2.002 10000 $2.002	Buy Now
Component Electronics, Inc	MTP1N100E		87			1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MTP1N Datasheets (63)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP1N100	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP1N100	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
MTP1N100	Motorola	Switchmode Datasheet	Scan	PDF
MTP1N100	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP1N100	Unknown	FET Data Book	Scan	PDF
MTP1N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP1N100	Semiconductor Technology	High Voltage MOS Power Field Effect Transistors	Scan	PDF
MTP1N100E	On Semiconductor	TMOS E-FET Power Field Effect Transistor	Original	PDF
MTP1N100E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP1N100E	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 1000V, .5A, Pkg Style TO220AB	Scan	PDF
MTP1N100E/D	On Semiconductor	TMOS POWER FET 1.0 AMPERES 1000 VOLTS	Original	PDF
MTP1N100E-D	On Semiconductor	TMOS E-FET Power Field Effect Transistor N-Channel	Original	PDF
MTP1N45	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP1N45	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF

MTP1N45	Motorola	Switchmode Datasheet	Scan	PDF
MTP1N45	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP1N45	Unknown	FET Data Book	Scan	PDF
MTP1N45	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP1N45	Semiconductor Technology	High Voltage MOS Power Field Effect Transistors	Scan	PDF
MTP1N50	Motorola	European Master Selection Guide 1986	Scan	PDF

MTP1N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MTP1N60 Abstract: mtp1n Text: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	PDF	MTP1N60E O-220 r14525 MTP1N60E/D MTP1N60 mtp1n
mtp1n Abstract: No abstract text available Text: MTP1N100E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is	Original	PDF	MTP1N100E MTP1N100E/D mtp1n
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP1N100E TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP1N100E O-220
MTP1N60E Abstract: AN569 MTP1N60 Text: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	PDF	MTP1N60E r14525 MTP1N60E/D MTP1N60E AN569 MTP1N60
MTP1N100 Abstract: mtp1n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP1N100 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	PDF	O-220 MTP1N100 MTP1N100 mtp1n
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N50E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP1N50E O-220
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N80E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP1N80E O-220
MTP1N50 Abstract: mtp1n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N50 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP1N50 MTP1N50 mtp1n
Untitled Abstract: No abstract text available Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	PDF	MTP1N50E O-220 r14525 MTP1N50E/D
AN569 Abstract: MTP1N60E Text: MOTOROLA Order this document by MTP1N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 600 VOLTS	Original	PDF	MTP1N60E/D MTP1N60E MTP1N60E/D* AN569 MTP1N60E
AN569 Abstract: MTP1N50E mtp1n Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	PDF	MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n
mtp1n Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP1N95 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	PDF	O-220 MTP1N95 MTP1N95 mtp1n
Untitled Abstract: No abstract text available Text: Jbztni-L.onaucto'i iJ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP1N60 FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min)	Original	PDF	MTP1N60 O-251
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP1N60E O-220

MTP1N100E Abstract: AN569 Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS	Original	PDF	MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569
MTP1N60 Abstract: mtp1n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP1N60 MTP1N60 mtp1n
MTP1N55 Abstract: mtp1n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N55 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP1N55 MTP1N55 mtp1n
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N80E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	OCR Scan	PDF	MTP1N80E/D TP1N80E parti19 21A-06
mtp3n6u Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50 Text: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2	OCR Scan	PDF	MTP1N60 O-220AB MTP1N95 MTP3N45 MTP3N50 MTP3N50E mtp3n6u MTP2P45 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
MTP3N80 Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60 Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5	OCR Scan	PDF	T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	OCR Scan	PDF	MTP1N100E/D 21A-06
Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed	OCR Scan	PDF	3b72S4 CHflb24 MTP1N50 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02
MTP6N55 Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840 Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5	OCR Scan	PDF	T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP6N55 MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP8N45 irf8408 MTP3N80 irf840
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N 50E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	OCR Scan	PDF	MTP1N50E/D 21A-06

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Rochester Electronics LLC MTP1N60E

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MTP1N Datasheets (63)

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