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    MTM35N06 Search Results

    MTM35N06 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTM35N06 Motorola Switchmode Datasheet Scan PDF
    MTM35N06 Motorola European Master Selection Guide 1986 Scan PDF
    MTM35N06 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTM35N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM35N06 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM35N06 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM35N06 Unknown FET Data Book Scan PDF
    MTM35N06E Motorola Switchmode Datasheet Scan PDF
    MTM35N06E Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTM35N06E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM35N06E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTM35N06E Unknown FET Data Book Scan PDF

    MTM35N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    35N06

    Abstract: MTM35N06 TH35N06 35N05 MTM35N05 TH35N05 MTH35N05
    Text: MOTOROLA • SEMICONDUCTOR m h h h h TECHNICAL DATA MTH35N05 MTH35N06 MTM35N05 MTM35N06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r


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    MTM20N08

    Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


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    PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    MTM20N08

    Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP2P45 MTM35N05 IRF123 IRF150 MTM12N08 MTM12P08 MTM25N08 MTM55N08

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


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    PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTP3055A

    Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP3055A MTM12N06 mtp25n06 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11

    an913 Motorola

    Abstract: AN913 TMOS POWER MOSFETs mosfet base inverter with chargers circuit MTM20N10 SN7407 CI sn74LS05 MTM8N10 TDT102 tl494 flyback MTM35N06
    Text: g AN-913 MOTOROLA Semiconductor Products Inc. Application Note DESIGNING WITH TMOS POWER MOSFETs Prepared by Kim Gauen Applications Engineer The advent of vertical current control in MOS Field Effect Transistors has brought their design advan ­ ta g e s , w e ll k n o w n to IC a n d S m a ll S ig n a l circu it


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    PDF AN-913 AN913/D AN913/D an913 Motorola AN913 TMOS POWER MOSFETs mosfet base inverter with chargers circuit MTM20N10 SN7407 CI sn74LS05 MTM8N10 TDT102 tl494 flyback MTM35N06

    MTM35N06E

    Abstract: 5n06e
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH 35N 06E M T M 3 5N 0 6E Designer's Data Sheet T M O S IV P o w e r Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate T h is advanced " E " series o f TMOS p o w e r MOSFETs is designed to w ith s ta n d high


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    PDF MTH/MTM35N06E MTM35N06E 5n06e

    TO204AE

    Abstract: MTM55N10 MTM25N06L MTM45N12 MDT 1200 MTM25N05L MTM35N05 MTM50N05E 251C MTM20N15
    Text: - m m £ *± A Vd s or £ t II £ Vg s V Id (V) MTM20N15 MOT N 150 + 20 MTM2DP06 MOT P -60 ± 2 0 I dss IGSS Pd * /CH Vd g 3 fê (Ta-25°G) V g s th> min * /CH (W) (A) 201 (nA) Vg s (V) (m a Vd s (V) ) 150 500 20 250 -20 125 ±100 ±20 -200 % (V) i o (on)


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    PDF Ta-25 MTM20N15 O-204AE MTM20P06 T0-204AA MTM20P08 O-20450 MTM60N05 TO204AE MTM55N10 MTM25N06L MTM45N12 MDT 1200 MTM25N05L MTM35N05 MTM50N05E 251C

    35n05

    Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
    Text: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power


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    PDF TH35N a4306SC 35n05 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N05