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    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)


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    MT3S04S

    Abstract: No abstract text available
    Text: TOSHIBA MT3S04S TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04S MT3S04S

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04S