Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F004 512K x 8 FLASH MEMORY |U |C = R O N FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: 16KB boot block protected Two 8KB param eter blocks Four m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access tim es: 60ns, 80ns, 100ns
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MT28F004
100ns
40-Pin
56-PIN
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Micron Quantum Devices
Abstract: MARKING flash 28F
Text: ADVANCE MT28F004 512K X 8 FLASH MEMORY FLASH MEMORY 512K x 8 FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low power: lOOuA standby; 60mA active, MAX • 5V±10% read; 12V±5% w rite/erase
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OCR Scan
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MT28F004
100ns
V/12V,
40-Pin
100ns
512Kx
Micron Quantum Devices
MARKING flash 28F
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F004 512K x 8 FLASH MEMORY MICRON I DEVICES. 'NC 512K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low pow er lOOfiA standby; 60mA active, MAX
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OCR Scan
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PDF
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MT28F004
V/12V,
100ns
100ns
00000H)
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MT28F004VG
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT28F004 512K x 8 FLASH MEMORY 512K x 8 I 5V/12V, BOOT BLOCK BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES • S even e rase blocks: 16KB b o o t block protected T w o 8KB p a ra m e te r blocks F o u r m a in m e m o ry blocks • 5V ±10% Vcc; 12V ±5% Vpp
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OCR Scan
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MT28F004
100ns
V/12V,
100ns
00000H)
MT28F004VG-8
MT28F004VG
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