Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
MRF9100R3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100LR3
MRF9100LSR3
MRF9100
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Transistor J182
Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100
MRF9100R3
MRF9100SR3
MRF9100
MRF9100R3
Transistor J182
MRF9100SR3
08053G105ZATEA
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J182 transistor
Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100R3
MRF9100SR3
MRF9100R3
J182 transistor
J152 mosfet transistor
MRF9100
MRF9100SR3
Transistor J182
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100B220GW
Abstract: 100B100GW
Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100R3
MRF9100SR3
100B220GW
100B100GW
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100B330JW
Abstract: MRF910 marking Z3 6-pin
Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
100B330JW
MRF910
marking Z3 6-pin
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MRF9100L
Abstract: MRF9100LSR3 marking c14 MRF9100 MRF9100LR
Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100LR3
MRF9100LSR3
MRF9100LR3
MRF9100L
MRF9100LSR3
marking c14
MRF9100
MRF9100LR
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100B330JW
Abstract: chip resistors 0805 philips MRF9100 esd z10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
100B330JW
chip resistors 0805 philips
esd z10
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100LR3
MRF9100LSR3
MRF9100LR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100R3
MRF9100SR3
MRF9100/D
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NIPPON CAPACITORS
Abstract: capacitor mttf 100B120JP 100B180JP
Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
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MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
MRF5S9100NR1
NIPPON CAPACITORS
capacitor mttf
100B120JP
100B180JP
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
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SG1009Q32005
MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
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TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station
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SG1009Q42004
MRF5S9070NR1,
MRF5S9100MR1,
MRF5S9100MBR1,
MRF5S9100NR1,
MRF5S9100NBR1,
MRF5S9101MR1,
MRF5S9101MBR1,
MRF5S9101NR1,
MRF5S9101NBR1,
TRANSISTOR REPLACEMENT GUIDE
FS Oncore
hf modem ofdm
bts 2140 1b data sheet
ISO 1302
uhf linear amplifier module
linear amplifier 470-860
amplifier mrf247
class AB hf bipolar
FM LDMOS freescale transistor
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF5S9100 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S9100NR1/NBR1.
MRF5S9100MR1
MRF5S9100MBR1
MRF5S9100MR1
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hatching machine
Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1
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MRF5S9100/D
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
hatching machine
NIPPON CAPACITORS
A113
AN1955
MRF5S9100MBR1
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hatching machine
Abstract: NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
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MRF5S9100
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
hatching machine
NIPPON CAPACITORS
AVG26
100B180JP
MARKING WB1
A114
A115
AN1955
C101
MRF5S9100
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NIPPON CAPACITORS
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 MRF5S9100NR1 ACPR25
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with
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MRF5S9100N
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100NR1
NIPPON CAPACITORS
A113
A114
A115
AN1955
C101
JESD22
MRF5S9100NBR1
ACPR25
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF5S9100N Rev. 5, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with
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MRF5S9100N
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100NR1
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MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product
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SG1000CRQ32005
SG1000CRQ32005
MC9S12XDP384
MPX7007
SG187
DSPA56371AF150
DSP56F803BU80E
MPC8548
DSP56303PV100
9s12dp256, 9s12dg256, 9s12dt256
MRF648 applications
mrf6s19100nb
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Mrf648
Abstract: MRF185 MRF373 MRF650 MG4100 MC3PHAC MRF648 applications mpx6115 MPX53 TPV8100B
Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 4, 2004 SG1000CRQ42004 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product
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SG1000CRQ42004
SG1000CRQ42004
Mrf648
MRF185
MRF373
MRF650
MG4100
MC3PHAC
MRF648 applications
mpx6115
MPX53
TPV8100B
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M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
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SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
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MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular
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SG1009Q42005
MMM6025,
MMM6035
MC13820
MRF6P3300HR3,
MRF6P3300HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MMM6029
NONLINEAR MODEL LDMOS
MMM6007
baseband DigRF
semiconductor cross index
MRF5S9080NB
MW6S010
MMM6000
MMH3101NT1
MRF648 applications
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