MRF5S21045N
Abstract: No abstract text available
Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S21045
MRF5S21045NR1/NBR1.
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045MR1
MRF5S21045N
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MRF5S21045N
Abstract: No abstract text available
Text: MRF5S21045 Rev. 0, 2/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110
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MRF5S21045
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045N
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1 MRF5S21045MR1 J591
Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S21045
MRF5S21045NR1/NBR1.
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045MR1
A113
A114
A115
AN1955
C101
JESD22
MRF5S21045
MRF5S21045MBR1
J591
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A114
Abstract: A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045NBR1 MRF5S21045NR1
Text: Document Number: MRF5S21045 Rev. 1, 7/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110
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MRF5S21045
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
A114
A115
AN1955
C101
JESD22
MRF5S21045
MRF5S21045MBR1
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MRF5S21045N
Abstract: No abstract text available
Text: Document Number: MRF5S21045 Rev. 1, 7/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110
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MRF5S21045
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
MRF5S21045
MRF5S21045N
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MRF5S21045N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045N
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J771
Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
J771
gps 144
1812y224kat
AN1955
JESD22-A114
MRF5S21045NBR1
TLX8-0300
a113 bolt
MRF5S21045N
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
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SG1009Q32005
MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045N
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
A113
A114
A115
AN1955
C101
JESD22
MRF5S21045NBR1
MRF5S21045N
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product
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SG1000CRQ32005
SG1000CRQ32005
MC9S12XDP384
MPX7007
SG187
DSPA56371AF150
DSP56F803BU80E
MPC8548
DSP56303PV100
9s12dp256, 9s12dg256, 9s12dt256
MRF648 applications
mrf6s19100nb
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MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular
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SG1009Q42005
MMM6025,
MMM6035
MC13820
MRF6P3300HR3,
MRF6P3300HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MMM6029
NONLINEAR MODEL LDMOS
MMM6007
baseband DigRF
semiconductor cross index
MRF5S9080NB
MW6S010
MMM6000
MMH3101NT1
MRF648 applications
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MRF5S21045N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045N
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MRF5S21045N
Abstract: No abstract text available
Text: Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5S21045N
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045N
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