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    Untitled

    Abstract: No abstract text available
    Text: MRF5836HXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10


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    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    2N5835

    Abstract: MRF583 2n6837 2n5836 MRF5836
    Text: MOTOROLA SEM ICONDUCTOR 2N5835 2N5836 2N5837 TECHNICAL DATA The R F L in e 2.5 GHz @ 10 m A dc - 2N583S 2.0 GHz @ 50 m A dc - 2N5836 1.7 GHz @ 100 m Adc - 2N5837 NPN SIL IC O N H IG H -FR EQ U EN CY T R A N SIS T O R S HIGH F REQ U EN C Y T R A N SIS T O R S


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    PDF 2N5835 2N5836 2N5837 2N583S 2N5837 2N5835, MRF583 2n6837 MRF5836