MOTOROLA RF POWER TRANSISTOR Search Results

MOTOROLA RF POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA RF POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CA2820 TRW Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022 Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power	Original	PDF	AN1022/D AN1022 CA2820 TRW ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022
MRF156R Abstract: MRF156 Arco 469 ceramic capacitor Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	Original	PDF	MRF156/D MRF156 MRF156R MRF156 MRF156/D* MRF156R Arco 469 ceramic capacitor
transistor 6c x Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF9060 MRF9060S MRF9060Sal MRF9060 MRF9060S MRF9060SR1 RDMRF9060NCDMA transistor 6c x MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060SR1
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET	Original	PDF	MRF9045MR1 RDMRF9045MR1
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.	Original	PDF	MRF284 MRF284S RDMRF284USCDMA MRF284 MRF284S
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS
LL1608-FHN2K Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K
MRFG35010M Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF9080 MRF9080S MRF9080 RDMRF9080GSM
SU 179 transistor Abstract: s227 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen	OCR Scan	PDF	MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227
MRF221 Abstract: 2N6081 Text: I MOTOROLA SC XSTRS/R F 4bE b3h?asM oo^msa ? D MOTOROLA SEMICONDUCTOR 2N6081 TECHNICAL DATA MRF221 The RF Line 15 W - 175 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed fo r 1 2.5 V o lt V H F large-signal power am plifier applica	OCR Scan	PDF	2N6081 MRF221 20/4B 2N6081, 00T4124 MRF221 2N6081
vk200 rf choke Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	OCR Scan	PDF	MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor
4C6 toroid Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125 Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET	OCR Scan	PDF	b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
MRF860 Abstract: 2n2222 npn transistor 2N2222 rf Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf

MRF455A Abstract: Motorola transistors MRF455 XSTR MRF455 4be marking 1000MP vk200 W-30 MRF-455A marking w30 Text: I MOTOROLA SC XSTRS/R F 4bE D b3b?2SM □ D ci 4 b 7 4 MOTOROLA SEMICONDUCTOR MRF455 MRF455A TECHNICAL DATA The RF Line 60 W — 30 M Hz RF POWER TRANSISTORS NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for pow er am plifier applications in industrial, com	OCR Scan	PDF	Dci4b74 MRF455 MRF455A 590-65/3B MRF455A Motorola transistors MRF455 XSTR 4be marking 1000MP vk200 W-30 MRF-455A marking w30
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
TIC 136 Transistor Abstract: mrf412 Text: MOTOROLA SC ÎXSTRS/R "flT ]>F\|k3l.72Si\| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier	OCR Scan	PDF	007flT71 MRF412 TIC 136 Transistor mrf412
MRF262 Abstract: MRF264 MRF260 MRF261 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N	OCR Scan	PDF	MRF261 O-220AB MRF260 MRF262 MRF264 MRF261
MRF477 Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear	OCR Scan	PDF	fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
transistor BD 135 Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza	OCR Scan	PDF	TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 J336 transistor k 2843 EQUIVALENT OF K 2843
9915 transistor Abstract: motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90 Text: MOTOROLA SC ÌXSTRS/R FJ AT DE \|b 3L72 SM DD7flT71 5 890 78971 & 3 6 7 2 S 4 M O T O R O L A SC CXSTRS/R F T ' 33 ' 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 7 0 W (P E P ) — 3 0 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR	OCR Scan	PDF	D07flT71 MRF412 -136V T-33-IS 9915 transistor motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90
MRF340 Abstract: AMO 0210 transistor s97 Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude	OCR Scan	PDF	MRF340 14bQ2 MRF340 AMO 0210 transistor s97
transistor 7905 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications	OCR Scan	PDF
56590653B Abstract: BH Rf transistor Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	PDF	56-590-65/3B MRF492 56590653B BH Rf transistor

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MOTOROLA RF POWER TRANSISTOR Search Results

MOTOROLA RF POWER TRANSISTOR Result Highlights (5)

MOTOROLA RF POWER TRANSISTOR Datasheets Context Search

CA2820 TRW

MRF156R

transistor 6c x

Untitled

Untitled

Untitled

LL1608-FHN2K

MRFG35010M

Untitled

SU 179 transistor

MRF221

vk200 rf choke

4C6 toroid

MRF860

MRF455A

rohm mtbf

TIC 136 Transistor

MRF262

MRF477

transistor BD 135

9915 transistor

MRF340

transistor 7905

56590653B