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    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3127MZ Rochester Electronics CA3127 - Transistor Array Visit Rochester Electronics Buy
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    STMicroelectronics VIPER115XSTR

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    XSTR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X09-009PK

    Abstract: PLC modem europe XH9-009PK X24-019PK XStream-PKG-RRS-232 009P "routing tables"
    Text: XStream-PKG-E Ethernet RF Modem XStream Ethernet RF Modem System Setup RF Modem Operation RF Modem Configuration RF Communication Modes Appendices Product Manual v5.x00 For XStream RF Modem Part Numbers X09-001PK…-E… X24-009PK…-E. XH9-001PK…-E.


    Original
    PDF X09-001PK. X24-009PK. XH9-001PK. X09-009PK. X09-019PK. X24-019PK. XH9-009PK. XH9-019PK. M100110 X09-009PK PLC modem europe XH9-009PK X24-019PK XStream-PKG-RRS-232 009P "routing tables"

    A1659

    Abstract: LC88F52H0A transistor P6n
    Text: Ordering number : ENA1659 LC88F52H0A CMOS LSI FROM 512K byte, RAM 24K byte on-chip 16-bit 1-chip Microcontroller Overview The SANYO LC88F52H0A is a 16-bit microcomputer that, centered around an Xstromy16 CPU, integrates on a single chip a number of hardware features such as 512K-byte flash ROM onboard programmable , 24K-byte RAM, eight 16bit timers, a base timer serving as a time-of-day clock, a real time clock, two synchronous SIO interfaces with automatic


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    PDF ENA1659 LC88F52H0A 16-bit LC88F52H0A Xstromy16 512K-byte 24K-byte 16bit 16-channel A1659 transistor P6n

    T2500M

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 1 S E I D b 3 b 7 2 5 4 Q G Ö 5 E 5 / | t r - 3 3 -0 7 MOTOROLA S EM IC O N D U C T O R TECHNICAL DATA M JD 47 M JD 50 High V oltage Pow er Transistors D P A K For Surface M oun t A pp lication s N P N S IU C O N P O W E R T R A N S IS T O R S


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    PDF TIP50 CL24S Y115M. MJD47-1) T2500M

    2N3797

    Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
    Text: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D


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    PDF 2N3796 2N3797 2N3796 O-206AA) 2N3798 2N3797 MOTOROLA 2N3796 MOTOROLA 2N3798

    2N2060

    Abstract: 2N2721 2N2060 MOTOROLA
    Text: MOTORCLA SC \ Ir * XSTRS/R F IZE O I b3b?2S4 00flb5fe,7 M i" J -. • m I ? 2N2721 CA S E 654-07, STYLE 1 M A X I M U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Vebo 6.0 Vdc


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    PDF 2N2721 2N2060 2N2060 MOTOROLA

    2N2844

    Abstract: 2N2843
    Text: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e


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    PDF b3b755M 2N2843 2N2844 O-206AA)

    IRFD9110

    Abstract: IRFD9112
    Text: MOTOROLA SC XSTRS/R F 12E D | t3b7SSM OOflbti? 7 | IRFD9110 IRFD9112 FET DIP C A S E 370 01, ST YLE 1 M AXIM UM RATINGS Symbol Rating IRFD9112 IRFD9110 Unit Drain-Source Voltage Voss -1 0 0 Vdc Drain-Gate Voltage Rq s = 20 ^ Vd g r -1 0 0 Vdc 20 Vdc Gate-Source Voltage


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    PDF IRFD9110 IRFD9112 IRFD911Q IRFD9112

    CA2418

    Abstract: CA2418R gp 532 714F-01 12CHANNEL 72S4
    Text: M OTO RO LA SC XSTRS/R F 1SE D | t,3t.72S4 □ □ÖÖ5GCJ 1 | MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA C A 2418 C A 24 18 R The RF Line 12-C h an n el 1 2 0 M H z C A T V Reverse A m p lifie rs 18.5 dB 5 -1 2 0 M H z CATV REVERSE AMPLIFIERS . . . designed specifically for use as return amplifiers for mid-split and high-split 2-way


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    PDF 12-Channel CA2418 CA2418R 714F-01, CA2418 714H-01, 12-channel CA2418R gp 532 714F-01 12CHANNEL 72S4

    4C6 toroid

    Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET


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    PDF b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125

    BD785

    Abstract: bd786 BD787 bd788 B0786 B0788 Motorola BD785 b0787 60VOLTS NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: motorola sc xstrs / r 15E f D I fc,3b72S4 G G f l4 7 4cl 1 | NPN MOTOROLA BD785, BD787 SEM ICO N D U CTO R PNP TECHNICAL DATA BD786, BD788 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS . , . designed for low power audio amplifier and low current, high­


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    PDF 3b72s4 BD785, BD787 BD786, BD788 BD786 BD787, 60VOLTS BD785 BD787 bd788 B0786 B0788 Motorola BD785 b0787 NPN, Si, POWER TRANSISTOR, PLASTIC

    J0350

    Abstract: JO3501 FTE801 JO3502 PTE801 J03501
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM


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    PDF b3b725M -R53-OI FTE801 J03501 J03SQ2 PTE801 JO3501 JO3502 J03502 J0350 J03501

    BUT51P

    Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
    Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS


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    PDF t3fci72S4 BUT51Pdarlington BUT51P 340D-01 O-218 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor

    BF373

    Abstract: VHF Transistors BF371 MOTOROLA BF371 TO226AA
    Text: MO TO RO LA SC 12E 0 XSTRS/R F I b3t,?aSM 0085^5 □ I IT-5H? BF371 BF373 M A X IM U M RATINGS S ym b ol B a tin g BF 371 BF 373 U n it C ollector-Em ittedVoltage VcEO 30 45 Vdc C ollector-Base Voltage VCBO 40 45 Vdc Em itter-Base Voltage V e BO 4 .0 Vdc C ollecto r C urrent - C ontinuous


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    PDF BF371 BF373 O-226AA) BF371 BF373 VHF Transistors BF371 MOTOROLA TO226AA

    BUT35

    Abstract: transistors but35 CM4050
    Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS


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    PDF b3L75S4 T-35-1? BUT35 BUT35 transistors but35 CM4050

    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


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    PDF BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking

    IRFE9120

    Abstract: IRFE9123 motorola power FET
    Text: MOTOROLA SC XSTRS/R F 1EE D | T~ ^ b3ti7a5H OOfibTOO 3 | IRFE9120 ' IRFE9123 M AXIM UM RA TIN GS IRFE9123 Unit 100 60 Vdc 100 60 Symbol IRFE9120 Drain-Source Voltage Voss Drain-Gate Voltage R q s = 20 kfí VDGR Rating Gale-Source Voltage Vdc ±20 Vg s CASE 648-08, STYLE 2


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    PDF Q0flb700 IRFE9120 IRFE9123 IRFE9120 IRFE9123 motorola power FET

    25CC

    Abstract: IRFF210 IRFF213
    Text: MOTOROLA SC XSTRS/R F la g D | b3b?aS4 OQflt.703 T | T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20


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    PDF IRFF210 IRFF213 IRFF213 O-205AF) 25CC

    marking wh sot-23

    Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
    Text: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L


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    PDF BSR56L' BSR58L OT-23 O-236AB) BSR56L BSR67L BSR58L BSR56; marking wh sot-23 BSR56 BSR57 BSR57L BSR58 BSR67 DIODES MARKING M5

    2N998

    Abstract: 2N2723 CB10
    Text: MGTORCLA SC XSTRS/R F 12E Sym bol Value Unit VCE20 60 Vde Collector-Base Voltage VcB1 80 Vdc Emitter-Base Voltage VE2B1 12 Vdc Collector Current — Continuous ic 40 Adc Total Device Dissipation @ Ta =- 25°C Derate above 25°C PO 0.5 2.9 Watt mW/°C Total Device Dissipation @ T c = 25°C


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    PDF b3L72S4 VCE20 2N2723 O-206AF) 2N998 2N2723 CB10

    2N6985

    Abstract: lg system ic transistor ac 125 equivalent
    Text: MOTOROLA SC XSTRS/R F b'iE » b3b?25M D1DD120 703 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range.


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    PDF b3b72SM 2N6985 G1GD123 2N6985 lg system ic transistor ac 125 equivalent

    SL2128

    Abstract: MRF965 MRF961 BFRC96 case 317-01
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­


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    PDF BFR96 BFRC96 MRF961 MRF962 MRF965 BFR96, BFRC96, MRF961, SL2128 MRF965 case 317-01

    MD6003

    Abstract: MD6003F MD6001
    Text: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous


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    PDF b3b7254 MD6001 MD6003 MD6002 MD6003F M06001 MD6001, MD6002, MD6003, MQ6001

    2N3972

    Abstract: 2N3971 2n3970 2N3971 motorola
    Text: M OTOROLA SC XSTRS/R F 15E D | b3b?aS4 QGät.bl7 5 | 2N3970 , thru 2N3972 CASE 22-03, STYLE 4 TO-18 TO-206AA 2 Drain MAXIMUM RATINGS R ating Drain-Source Voltage Sym bol Value U n it VDS 40 Vdc Vdc Vdg 40 V g SR 40 Vdc Forward Gate C urrent •g f 50 m A dc


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    PDF 2N3970 2N3972 O-206AA) 2N3970: 2N3971: 2N3972; 2N3970 2N3971 2N3972 2N3971 motorola

    2n2501

    Abstract: 2N2501 MOTOROLA Rbl 69
    Text: MOTOROLA SC XSTRS/R F 15E I b3b7354 GGflt,2bD 1 I r-3r-/3 M A X I M U M R A T IN G S Symbol Value Unit Coliector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage Vc b o 40 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc Total Device Dissipation @ T>\ = 26°C Derate above 25°C


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    PDF b3b7354 2N2501 2n2501 2N2501 MOTOROLA Rbl 69