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    MOSFET N-CHANNEL 60V 60A Search Results

    MOSFET N-CHANNEL 60V 60A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N-CHANNEL 60V 60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISD 3000

    Abstract: chengdu
    Text: CPEC RX60N06 RX60N06 Silicon N Channel Power MOSFET Description The RX60N06 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features •VDSS =60V ·ID =60A ·RDS on ＜7mΩ (VGS=10V)


    Original     		PDF RX60N06 RX60N06 6TO-220 ISD 3000 chengdu

    p60nf06

    Abstract: P60NF P60NF06 TO-220 STripFET P60NF*06 STP60NF06
    Text: STP60NF06 STP60NF06FP N-channel 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A STP60NF06FP 60V <0.016Ω 60A 3 3 • Exceptional dv/dt capability ■ 100% avalanche tested


    Original     		PDF STP60NF06 STP60NF06FP O-220/TO-220FP O-220 O-220FP p60nf06 P60NF P60NF06 TO-220 STripFET P60NF*06

    p60nf06

    Abstract: P60NF P60NF06 TO-220 P60NF*06 STP60NF06FP p60n p60nf0 NS414
    Text: STP60NF06 STP60NF06FP N-channel 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A STP60NF06FP 60V <0.016Ω 60A 3 3 • Exceptional dv/dt capability ■ 100% avalanche tested


    Original     		PDF STP60NF06 STP60NF06FP O-220/TO-220FP O-220 O-220FP p60nf06 P60NF P60NF06 TO-220 P60NF*06 STP60NF06FP p60n p60nf0 NS414

    MOSFET N-CHANNEL 60v 60A

    Abstract: 60n06 60n06l
    Text: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom


    Original     		PDF 60N06 60N06 115pF QW-R502-121 MOSFET N-CHANNEL 60v 60A 60n06l

    b60nf06

    Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
    Text: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STB60NF06 STB60NF06-1 b60nf06 B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368

    p60nf06l

    Abstract: P60NF p60nf06 b60nf06l b60nf06 B60NF smd diode L30 p60nf0 p60n p60nf06lfp
    Text: STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06L 60V <0.014Ω 60 STP60NF06L 60V <0.014Ω 60A STP60NF06LFP 60V <0.014Ω 60A(1) 3 1. Refer to SOA for the max allowable current values on


    Original     		PDF STB60NF06L STP60NF06L STP60NF06LFP O-220/D2PAK/TO-220FP STP60NF06L O-220FP O-220 p60nf06l P60NF p60nf06 b60nf06l b60nf06 B60NF smd diode L30 p60nf0 p60n p60nf06lfp

    p60nf06l

    Abstract: No abstract text available
    Text: STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06L 60V <0.014Ω 60 STP60NF06L 60V <0.014Ω 60A STP60NF06LFP 60V <0.014Ω 60A(1) 3 1. Refer to SOA for the max allowable current values on


    Original     		PDF STB60NF06L STP60NF06L STP60NF06LFP O-220/D2PAK/TO-220FP STP60NF06L O-220FP O-220 p60nf06l

    b60nf06

    Abstract: B60NF
    Text: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STB60NF06 STB60NF06-1 b60nf06 B60NF

    65NF06

    Abstract: P65NF06 p65nf p65nf06 equivalents P65NF06 TO220 STP65NF06 p65nf0 STD65NF06 JESD97
    Text: STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET II Power MOSFET General features • ■ Type VDSS RDS on ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A Standard level gate drive 3 3 1 100% avalanche tested DPAK 1 2 TO-220


    Original     		PDF STD65NF06 STP65NF06 DPAK/TO-220 O-220 65NF06 P65NF06 p65nf p65nf06 equivalents P65NF06 TO220 STP65NF06 p65nf0 STD65NF06 JESD97

    D60NF06

    Abstract: No abstract text available
    Text: STD60NF06 N-channel 60V - 0.014Ω - 60A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description


    Original     		PDF STD60NF06 D60NF06

    schematic diagram 48v UPS

    Abstract: schematic diagram 48V telecom ups equivalent stp60nf06 STP60NF06 schematic diagram 24v UPS STP60NF *p60nf06
    Text: STP60NF06 N-CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF06 • ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STP60NF06 O-220 schematic diagram 48v UPS schematic diagram 48V telecom ups equivalent stp60nf06 STP60NF06 schematic diagram 24v UPS STP60NF *p60nf06

    schematic diagram 48v UPS

    Abstract: schematic diagram 24v UPS STB60NF06 DT400
    Text: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STB60NF06 schematic diagram 48v UPS schematic diagram 24v UPS STB60NF06 DT400

    STP60N

    Abstract: *p60nf06
    Text: STP60NF06 N-CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF06 • ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF O-220 STP60NF06 O-220ny STP60N *p60nf06

    schematic diagram 48v UPS

    Abstract: schematic diagram 48V telecom ups STB60NF06 schematic diagram 24v UPS
    Text: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STB60NF06 schematic diagram 48v UPS schematic diagram 48V telecom ups STB60NF06 schematic diagram 24v UPS

    schematic diagram 48v UPS

    Abstract: schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06
    Text: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STB60NF06 schematic diagram 48v UPS schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06

    b60ne

    Abstract: B60NE06L STB60NE06L-16T4 B60NE06
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 STB60NE06L-16T4erein b60ne B60NE06L STB60NE06L-16T4 B60NE06

    B60NE06L

    Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 B60NE06L b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4

    p60nf06

    Abstract: P60NF0
    Text: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 1 2 3 TO-220


    Original     		PDF STP60NF06 O-220 p60nf06 P60NF0

    p60nf06

    Abstract: P60NF P60NF06 TO-220 p60nf0 P60NF*06 *p60nf06 P60*nf06 p60n STP60NF061 STP60NF06
    Text: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220


    Original     		PDF STP60NF06 O-220 p60nf06 P60NF P60NF06 TO-220 p60nf0 P60NF*06 *p60nf06 P60*nf06 p60n STP60NF061 STP60NF06

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP9972 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.


    Original     		PDF UP9972 UP9972 UP9972L-TN3-R UP9972G-TN3-R UP9972L-TN3-T UP9972G-TN3-T UP9972L-TA3-T UP9972G-TA3-T 2012at

    n-channel, 60v, 60a

    Abstract: TO263-2L mosfet 20v 30A 60a LOGIC N-Channel MOSFET bridge diode 60a power switching ST6006 ST6006S ST6006T220RG ST6006T220TG
    Text: N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A DESCRIPTION The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.


    Original     		PDF ST6006S ST6006 0V/60A ST6006 O-220-3L O-263-2L ST6006S n-channel, 60v, 60a TO263-2L mosfet 20v 30A 60a LOGIC N-Channel MOSFET bridge diode 60a power switching ST6006T220RG ST6006T220TG

    p60nf06

    Abstract: No abstract text available
    Text: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP


    Original     		PDF STP60NF06FP O-220FP p60nf06

    P60NF06

    Abstract: P60NF p60nf0 P60NF*06 P60*nf06 STP60NF06FP STP60 *p60nf06 p60n STripFET
    Text: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP


    Original     		PDF STP60NF06FP O-220FP P60NF06 P60NF p60nf0 P60NF*06 P60*nf06 STP60NF06FP STP60 *p60nf06 p60n STripFET

    RFG60P06E

    Abstract: No abstract text available
    Text: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFG60P06E O-247 175oC RFG60P06E 11e-1 34e-3 46e-12) 15e-10 1e-30