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    MOSFET 76139S Search Results

    MOSFET 76139S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 76139S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76139S

    Abstract: 76139P HUF76139P3 HUF76139S3S HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Semiconductor Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 139P3, This advanced process technology


    Original     		PDF HUF76139P3, HUF76139S3S HUF76 139P3, 139S3S low30V, 65e-3, 25e-3, 75e-2, 76139S 76139P HUF76139P3 HUF76139S3S HUF76139S3ST TB334

    76139p

    Abstract: 76139s 76139 AN9321 HUF76139P3 HUF76139S3S HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 199ts 76139p 76139s 76139 AN9321 HUF76139P3 HUF76139S3S HUF76139S3ST TB334

    76139s

    Abstract: 76139p
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 39P UF76 9S3 bt A, V, 075 m, an, gic vel raF wer OSTs utho These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    Original     		PDF HUF76139P3, HUF76139S3S TB334, 76139s 76139p

    76139p

    Abstract: 76139s MOSFET 76139s HUF76139S3S AN9321 HUF76139P3 HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 2001opment. 76139p 76139s MOSFET 76139s HUF76139S3S AN9321 HUF76139P3 HUF76139S3ST TB334

    76139P

    Abstract: 76139s 76139 HUF76139P3 TA7613 AN9321 HUF76139S3S HUF76139S3ST TB334 TA761
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 76139P 76139s 76139 HUF76139P3 TA7613 AN9321 HUF76139S3S HUF76139S3ST TB334 TA761

    76139P

    Abstract: 76139s 84S1A HUF76139P3
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S O-263 HUF76139S3S 76139P 76139s 84S1A HUF76139P3