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    HUF76139S3ST Price and Stock

    Rochester Electronics LLC HUF76139S3ST

    N-CHANNEL POWER MOSFET
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    Rochester Electronics LLC HUF76139S3STK

    N-CHANNEL POWER MOSFET
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    Fairchild Semiconductor Corporation HUF76139S3ST

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    Bristol Electronics HUF76139S3ST 492
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    Rochester Electronics HUF76139S3ST 1,950 1
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    ComSIT USA HUF76139S3ST 675
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    Fairchild Semiconductor Corporation HUF76139S3STK

    75A, 30V, 0.01ohm, N-Channel Power MOSFET, TO-263AB '
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    Rochester Electronics HUF76139S3STK 24,000 1
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    HUF76139S3ST Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76139S3ST Fairchild Semiconductor 75 A, 30 V, 0.0075 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76139S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76139s

    Abstract: 76139p
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 39P UF76 9S3 bt A, V, 075 m, an, gic vel raF wer OSTs utho These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    Original     		PDF HUF76139P3, HUF76139S3S TB334, 76139s 76139p

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76139S

    Abstract: 76139P HUF76139P3 HUF76139S3S HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Semiconductor Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 139P3, This advanced process technology


    Original     		PDF HUF76139P3, HUF76139S3S HUF76 139P3, 139S3S low30V, 65e-3, 25e-3, 75e-2, 76139S 76139P HUF76139P3 HUF76139S3S HUF76139S3ST TB334

    76139p

    Abstract: 76139s 76139 AN9321 HUF76139P3 HUF76139S3S HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 199ts 76139p 76139s 76139 AN9321 HUF76139P3 HUF76139S3S HUF76139S3ST TB334

    76139p

    Abstract: 76139s MOSFET 76139s HUF76139S3S AN9321 HUF76139P3 HUF76139S3ST TB334
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 2001opment. 76139p 76139s MOSFET 76139s HUF76139S3S AN9321 HUF76139P3 HUF76139S3ST TB334

    76139P

    Abstract: 76139s 84S1A HUF76139P3
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S O-263 HUF76139S3S 76139P 76139s 84S1A HUF76139P3

    76139P

    Abstract: 76139s 76139 HUF76139P3 TA7613 AN9321 HUF76139S3S HUF76139S3ST TB334 TA761
    Text: HUF76139P3, HUF76139S3S Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76139P3, HUF76139S3S 76139P 76139s 76139 HUF76139P3 TA7613 AN9321 HUF76139S3S HUF76139S3ST TB334 TA761

    76139s

    Abstract: 76139P HUF76139S3S TA76139 HUF76139P3
    Text: interrii HUF76139P3, HUF76139S3S D ata S h e e t 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76139P3, HUF76139S3S HUF76139S3S AN7254 AN7260. 76139s 76139P TA76139 HUF76139P3

    76139s

    Abstract: 76139p HUF76139P3 76139
    Text: ASSESS? HUF76139P3, HUF76139S3, HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 75A,30V • Ultra Low On-Resistance, ros ON = 0.0075£2 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF HUF76139P3, HUF76139S3, HUF76139S3S TB334, O-263AB O-263AB 76139s 76139p HUF76139P3 76139

    76139P

    Abstract: No abstract text available
    Text: HUF76139P3, HUF76139S3S Semiconductor Data Sheet 75A, 30 V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs $ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76139P3, HUF76139S3S 35e-3, 45e-3, e6/643) 76139P

    76139s

    Abstract: MOSFET 76139s Li ION spice model charge 76139p DC Relay 50A
    Text: HUF76139P3, HUF76139S3, HUF76139S3S S em iconductor 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 Features >w • Logic Level Gate Drive • 7 5 A ,3 0 V • Ultra Low On-Resistance, cds ON = 0.0075ii • Temperature Com pensating PSPICE Model


    OCR Scan     		PDF HUF76139P3, HUF76139S3, HUF76139S3S 0075ii TB334, O-263AB 330mm 76139s MOSFET 76139s Li ION spice model charge 76139p DC Relay 50A