MOSFET 500 WATT Search Results

MOSFET 500 WATT Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 500 WATT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
t2p50e Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTB2P50E MTB2P50E/D t2p50e p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r	PDF
mosfet 4702 Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364 Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364	PDF
mosfet transistor 400 volts.100 amperes Abstract: No abstract text available Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTB2P50E MTB2P50E/D mosfet transistor 400 volts.100 amperes	PDF
IXZ2210N50L Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF	PDF
Amp. mosfet 1000 watt Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTB2P50E MTB2P50E/D Amp. mosfet 1000 watt AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes	PDF
t2p50e Abstract: No abstract text available Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTB2P50E MTB2P50E/D t2p50e	PDF
AN569 Abstract: MTW20N50E Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTW20N50E r14525 MTW20N50E/D AN569 MTW20N50E	PDF
MTY30N50E Abstract: No abstract text available Text: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTY30N50E O-264 r14525 MTY30N50E/D MTY30N50E	PDF
MTY30N50E Abstract: AN569 Text: MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTY30N50E r14525 MTY30N50E/D MTY30N50E AN569	PDF
Untitled Abstract: No abstract text available Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTW20N50E O-247 r14525 MTW20N50E/D	PDF
AN569 Abstract: MTP1N50E mtp1n Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N50E r14525 MTP1N50E/D AN569 MTP1N50E mtp1n	PDF
MTP2P50E Abstract: AN569 mosfet transistor 400 volts.100 amperes Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTP2P50E r14525 MTP2P50E/D MTP2P50E AN569 mosfet transistor 400 volts.100 amperes	PDF
TL 188 TRANSISTOR PIN DIAGRAM Abstract: AN569 MTY20N50E Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTY20N50E r14525 MTY20N50E/D TL 188 TRANSISTOR PIN DIAGRAM AN569 MTY20N50E	PDF
AN569 Abstract: MTP2P50E mosfet transistor 400 volts.100 amperes Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed	Original	MTP2P50E O-220 MTP2P50E/D AN569 MTP2P50E mosfet transistor 400 volts.100 amperes	PDF

MTW14N50 Abstract: MTW14N50E AN569 MT*14N50E MTW14N50E-D Text: MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTW14N50E r14525 MTW14N50E/D MTW14N50 MTW14N50E AN569 MT*14N50E MTW14N50E-D	PDF
Untitled Abstract: No abstract text available Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is	Original	MTY20N50E MTY20N50E/D	PDF
Untitled Abstract: No abstract text available Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N50E O-220 r14525 MTP1N50E/D	PDF
t5n50 Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK Text: NTD5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS	Original	NTD5N50 r14525 NTD5N50/D t5n50 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS	Original	MRF275G	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc	Original	MRF166C MRF166C MRF136, DV2820, BLF244, SD1902, ST1001	PDF
mrf275g Abstract: No abstract text available Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND	Original	MRF275G/D MRF275G MRF275G MRF275G/D	PDF
planar transformer theory Abstract: johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters Text: Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz	Original	MRF275G/D MRF275G planar transformer theory johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters	PDF
motorola AN211A Abstract: 42256 planar transformer theory Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc	OCR Scan	MRF275G MRF275G motorola AN211A 42256 planar transformer theory	PDF
zt177 Abstract: FT 1609 MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed prim arily for wideband large -sig n a l output and driver from 30-500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts	OCR Scan	IS22I MRF160 zt177 FT 1609 MOSFET	PDF

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MOSFET 500 WATT Search Results

MOSFET 500 WATT Result Highlights (5)

MOSFET 500 WATT Datasheets Context Search

t2p50e

mosfet 4702

mosfet transistor 400 volts.100 amperes

IXZ2210N50L

Amp. mosfet 1000 watt

t2p50e

AN569

MTY30N50E

MTY30N50E

Untitled

AN569

MTP2P50E

TL 188 TRANSISTOR PIN DIAGRAM

AN569

MTW14N50

Untitled

Untitled

t5n50

Untitled

Untitled

mrf275g

planar transformer theory

motorola AN211A

zt177