D223
Abstract: RIN200 DCM103 625E3 MAX9000 MAX9002 MAX9003 MAX9005 MAX951 dp106
Text: * MAX9000 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator + Reference * Single +2.5V to +5.5V Supply Operation * Available in 8-Pin SO/uMAX MAX9000 * 8-Pin SO/uMAX (MAX9002) * 8-Pin SO/uMAX (MAX9003) * 8-Pin SO/uMAX (MAX9005)
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MAX9000
MAX9000)
MAX9002)
MAX9003)
MAX9005)
MAX9000
MAX9002
MAX9003
MAX9005
MAX9001/MAX9004)
D223
RIN200
DCM103
625E3
MAX9002
MAX9003
MAX9005
MAX951
dp106
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F226
Abstract: MAX951 MAX952 G-1-12
Text: * MAX952 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator + Reference * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Internal 1.2V Reference * Outputs Swing Rail to Rail * Internal Comparator Hysteresis
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MAX952
MAX952
RH101
RH102
DP101
DP102
VP100
VP102
F226
MAX951
G-1-12
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ISL62883BHRTZ
Abstract: ISL62883HRTZ SM1206 DATASHEET thermistor ntc 60 0250 ISL62883 ISL62883B ISL62883IRTZ TB347 I 62883 of thermistor 47K ohms ntc
Text: ISL62883, ISL62883B Data Sheet August 20, 2009 Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs The ISL62883 is a multiphase PWM buck regulator for miroprocessor core power supply. The multiphase buck converter uses interleaved phase to reduce the total output
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ISL62883,
ISL62883B
ISL62883
ISL62883
5m-1994.
FN6891
ISL62883BHRTZ
ISL62883HRTZ
SM1206 DATASHEET
thermistor ntc 60 0250
ISL62883B
ISL62883IRTZ
TB347
I 62883
of thermistor 47K ohms ntc
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ISL62883HRTZ-T
Abstract: ISL62883 10kHz ESR 20ohm ISL62883HRTZ ISL62883B ISL62883BHRTZ ISL62883BHRTZ-T ISL62883IRTZ ISL62883IRTZ-T 32 pins tqfn 5x5 footprint
Text: ISL62883, ISL62883B Data Sheet April 1, 2009 Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs The ISL62883 is a multiphase PWM buck regulator for miroprocessor core power supply. The multiphase buck converter uses interleaved phase to reduce the total output
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ISL62883,
ISL62883B
ISL62883
ISL62883
5m-1994.
FN6891
ISL62883HRTZ-T
10kHz ESR 20ohm
ISL62883HRTZ
ISL62883B
ISL62883BHRTZ
ISL62883BHRTZ-T
ISL62883IRTZ
ISL62883IRTZ-T
32 pins tqfn 5x5 footprint
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MAX954
Abstract: F226 DCM103
Text: * MAX954 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Outputs Swing Rail to Rail * Internal Comparator Hysteresis * Op Amp Gain Stability 10V/V
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MAX954
MAX954
RH101
RH102
DP101
DP102
VP100
F226
DCM103
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PS331
Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
Text: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8
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PS3100
14-bit
PS331
PS331S
Data sheet of thermistor 10K ohms ntc
Microcrystal MX1V-TL-32.768K
2N7002-SOT23
SOT23-GSD
SOT23GSD
cmr200tb
MFR resistor
MX1V-TL
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Untitled
Abstract: No abstract text available
Text: PowerMOSFET OUTLI NE F21F60CPM Uni t mm Package FTO220A 3pi n ロット記号 （例） Date code 600V21A 4.5 10.０ 品名略号 Type No. 15.０ 管理番号 （例） Control No. ３.45 0000 21F60CPM 13.5 Feat ur e Hi ghVol t age LowRON Fas tSwi t chi ng
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21F60CPM
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11F60c3m
Abstract: 11F60
Text: PowerMOSFET OUTLI NE F11F60C3M Uni tmm Package FTO220A 600V11A ロット記号 （例） Date code 4.5 10 0000 15 管理番号 （例） Control No. 11F60C3M 品名略号 Type No. Feat ur e 13.5 LowRON Fas tSwi t chi ng I s ol at edPackage ①: G ②:D ③: S
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11F60C3M
11F60c3m
11F60
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Untitled
Abstract: No abstract text available
Text: STP3NB90 STP3NB90FP N - CHANNEL 900V - 4 £2 - 3.5 A - TO-220/TO-220FP _ PowerMESH MOSFET TARGET DATA TYPE V STP 3N B90 S TP 3N B90FP • . . . . dss 900 V 900 V Id R D S o n < 4.2 < 4.2 a a 3.5 A 3.5 A TYPICAL RDS(on) = 4 EXTREMELY HIGH dv/dt CAPABILITY
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STP3NB90
STP3NB90FP
O-220/TO-220FP
B90FP
STP3NB90/FP
O-22QFP
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3ne06
Abstract: No abstract text available
Text: STN3NE06 N - CHANNEL 60V - 0.08Î2 - 3A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 3N E06 60 V < 0 .1 0 0 Q 3 A . . . . . TYPICAL Fbs(on) = 0.08 Ü EXCEPTIONALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STN3NE06
OT-223
3ne06
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3NB50
Abstract: No abstract text available
Text: SGS-THOMSON M TO »« STD3NB50 N - CHANNEL 500V - 2.5Q - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD 3N B50 • . . . . V dss RDS on Id 500 V < 2.8 Q 3 A TYPICAL RDS(on) = 2.5 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STD3NB50
3NB50
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Untitled
Abstract: No abstract text available
Text: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED
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STN3NE06
OT-223
OT-223
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Untitled
Abstract: No abstract text available
Text: STN3NE06L N - CHANNEL 60V - 0.10 £2 - 3A - SOT-223 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STN 3N E06L V dss R d S oii Id 60 V < 0 .1 2 0 a 3 A = • TYPICAL RDS(on) 0.10 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED
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STN3NE06L
OT-223
OT-223
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB3N120E/D
MTB3N120E
In982.
418B-02
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BF817
Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N
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1270J
en-100kHz
BF800
3x10-"
BF801
T0-72
4x10-"
BF802
BF805
6x10-"
BF817
3N225
3N160
BF806
p channel depletion mosfet
3N201
BF818
n channel depletion MOSFET
dual gate mosfet in uhf amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET
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MTD3N25E/D
TD3N25E
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TP3N60
Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high
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MTM/MTP3N60,
MTP3N55
TP3N60
p3n60
TP3N55
3n60 MOSFEt
3n60 transistor
3N55
mtp3n55
3N60
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3N163-64
Abstract: MOSFET 3N 200
Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch _ ^ mm « /« Iä W I# . C Q IO Q IC M \J CORPORATION 3N163/3N164 ABSOLUTE MAXIMUM RATINGS N o te l (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance
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3N163/3N164
3N163
-10mA,
3N163
3N164
-10mA
200ns
10Mfl
3N163-64
MOSFET 3N 200
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k 3561 MOSFET
Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con
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DK101
O-22QAB
k 3561 MOSFET
TP5N05
BUZ80a equivalent
p20n50
P12N08
nx 9120
TP3N40
FD1Z0
IRFZ22 mosfet
th15n20
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MFE823
Abstract: 3N163 3N164 electrometer
Text: 3 N 164 enhancem ent-type p-channel MOSFETs 3 N 163 £ _ aesignea ror • • s s iliconix Performance Curves MRA see sections • • Ultra-High Input Impedance b e n e f its * bugged MOS Gate Minimize s Handling Problems ±150 V Transient Capabil ity A m p lifie r s
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3N163
3N164
MFE823
3N163
3N164
electrometer
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Untitled
Abstract: No abstract text available
Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)
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3N163.
3N164
3N163
3N164
375mW
3N163)
3N164)
200ns
300ms.
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mtp3n45
Abstract: VG-11T
Text: M O TO ROLA • SEM ICONDUCTOR TECHNICAL DATA M T P 3N 45 M T P 3N 50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES rDS on = 3 OHMS 450 and 500 VOLTS These TM O S Pow er FETs are designed fo r m e d iu m voltage,
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MTP3N45,
mtp3n45
VG-11T
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3N165
Abstract: 3N166
Text: G E SOLI» STATE □1 D E|3 fl7 S D fll T - GDI I d 17 3N165, 3N166 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Impedance • High Gate Breakdown Drain-Source or Drain-Gate Voltage Note 2
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3N165,
3N166
307SDÃ
3N165
-500HA
3N170
300ms.
3N165
3N166
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3N165
Abstract: 3N166 3N170
Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier caloric C O RPO RATIO N v 3N1B5/3N166 A B S O L U T E M A X IM U M R A T IN G S N o te 1 ( T a = 2 5 °C unless otherwise specified) FE A TU R E S • Very H igh Im pe d a n c e
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3N165/3N166
3N165
3N166
-10mA,
100MHz
-500hA
-500hA
3N170
300ms.
3N165
3N166
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