G3VM-41LR10
Abstract: mosfet 407
Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 404 MOSFET Relay – G3VM-41LR6 Text Text MOSFET Relays – G3VM-41LR10 World’s Smallest SSOP Package MOSFET Relays COFF (typical : 0.45 pF, RON (typical): 12 Ω) with Low Output Capacitance and ON Resistance (CxR = 5 pF•Ω) in a 40-V
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G3VM-41LR6
G3VM-41LR10
G3VM-41LR11
J964-E2-01
G3VM-41LR10
mosfet 407
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
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QFN40
Abstract: application note gate driver with bootstrap capacitor PGND19
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
NCP5369
40-pin
QFN40
NCP5369/D
QFN40
application note gate driver with bootstrap capacitor
PGND19
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Untitled
Abstract: No abstract text available
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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ncp53
Abstract: QFN-40
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
40-pin
QFN40
485AZ
NCP5369/D
ncp53
QFN-40
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QFN56 footprint
Abstract: bootstrap diode ncp53 NCP5360R
Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated
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NCP5360R
56-pin
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QFN56 footprint
bootstrap diode
ncp53
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Untitled
Abstract: No abstract text available
Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated
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NCP5360R
NCP5360R
56-pin
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Untitled
Abstract: No abstract text available
Text: NCP81081 Integrated Driver and MOSFET The NCP81081 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP81081
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NCP81081
40-pin
QFN40
NCP81081/D
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Untitled
Abstract: No abstract text available
Text: NCP5360A Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360A integrated
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NCP5360A
NCP5360A
56-pin
QFN56
485AY
NCP5360A/D
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Untitled
Abstract: No abstract text available
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
40-pin
QFN40
485AZ
NCP5369/D
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
40-pin
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
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Untitled
Abstract: No abstract text available
Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP75N08A
O-220
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Untitled
Abstract: No abstract text available
Text: NCP5366 Integrated Driver and MOSFET The NCP5366 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 6mm x 6mm 40-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5366 integrated
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NCP5366
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AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of
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AN799
TC4424
D-81739
DS00799A*
DS00799A-page
AN799 Matching MOSFET Drivers to MOSFETs
an799
an799 microchip
IRF450A
TC4424 motor driver
Matching MOSFET Drivers to MOSFETs
TC4431 application
TC4420 die
MOSFET TEST SIMPLE Procedures
TC4424
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Abstract: No abstract text available
Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
SCH2805/D
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Untitled
Abstract: No abstract text available
Text: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)
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SCH2819
ENN8291
SCH1419)
SS0503)
SCH2819/D
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2P50EG
Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
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2P50EG
2P50
2p50e
AN569
MTP2P50E
MTP2P50EG
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
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IRFM054
Abstract: SHD218501 SHD218501A SHD218501B
Text: SHD218501 SHD218501A SHD218501B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 303, REV. B Formerly Part Number SHD2181/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.027 Ohm, 45A MOSFET • Isolated Hermetic Metal Package • Fast Switching
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SHD218501
SHD218501A
SHD218501B
SHD2181/A/B
IRFM054
SHD218501
SHD218501A
SHD218501B
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Untitled
Abstract: No abstract text available
Text: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained
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SCH2809
ENA0446
SCH1305)
SBS018)
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Amp. mosfet 1000 watt
Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
Amp. mosfet 1000 watt
AN569
MTB2P50E
MTB2P50ET4
mosfet transistor 400 volts.100 amperes
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t2p50e
Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
t2p50e
p50eg
AN569
MTB2P50E
MTB2P50ET4
MTB2P50ET4G
mosfet transistor 400 volts.100 amperes
ww h 845 1 r
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AN569
Abstract: MTP1N50E mtp1n
Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to
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MTP1N50E
r14525
MTP1N50E/D
AN569
MTP1N50E
mtp1n
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