9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
|
Original
|
PDF
|
2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
|
SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
|
Original
|
PDF
|
LP1030D
LP1030D
DSFP-LP1030D
NR011613
SOT-23 MOSFET P-CHANNEL a1 1- mark
L21e
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N30 Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
4N30L-TN3-R
4N30G-TN3-R
4N30L-TN3-T
4N30G-TN3-T
O-252
QW-R502-850
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N30Z Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
4N30Z
4N30Z
4N30ZL-TN3-R
4N30ZG-TN3-R
4N30ZL-TN3-T
4N30ZG-TN3-T
O-252
QW-R502-849
|
10N30
Abstract: 738A power mosfet 200A
Text: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
10N30
10N30
O-220
QW-R502-738
738A
power mosfet 200A
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
12N30
12N30
QW-R502-787
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
UF2N30Z
UF2N30Z
UF2N30ZL-AA3-R
UF2N30ZG-AA3-R
OT-223
QW-R502-761
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
UF2N30Z
UF2N30Z
UF2N30ZG-AA3-R
OT-223
UF2N30ZL-TN3-T
UF2N30ZG-TN3-T
O-251
UF2N30ZL-TNS-T
UF2N30ZG-TNS-T
O-251S
|
10N30
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
10N30
10N30
QW-R502-738
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
UF2N30Z
UF2N30Z
OT-223
UF2N30ZL-AA3-R
UF2N30ZG-AA3-R
QW-R502-761
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
|
Original
|
PDF
|
UF2N30
UF2N30
UF2N30L-AA3-R
UF2N30G-AA3-R
OT-223
QW-R502-761
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N30Z Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251 The UTC UF3N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior
|
Original
|
PDF
|
UF3N30Z
O-251
UF3N30Z
O-252
UF3N30ZL-TM3-R
UF3N30ZG-TM3-R
UF3N30ZL-TN3-T
UF3N30ZG-TN3-T
UF3N30ZL-TN3-R
UF3N30ZG-TN3-R
|
4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
|
Original
|
PDF
|
AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
|
Untitled
Abstract: No abstract text available
Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides
|
Original
|
PDF
|
FDPF17N60NT
|
|
|
AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of
|
Original
|
PDF
|
AN799
TC4424
D-81739
DS00799A*
DS00799A-page
AN799 Matching MOSFET Drivers to MOSFETs
an799
an799 microchip
IRF450A
TC4424 motor driver
Matching MOSFET Drivers to MOSFETs
TC4431 application
TC4420 die
MOSFET TEST SIMPLE Procedures
TC4424
|
Untitled
Abstract: No abstract text available
Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
|
Original
|
PDF
|
FDD5N60NZ
|
Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
|
Original
|
PDF
|
FDPF4N60NZ
|
FDD4N60NZ
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
|
Original
|
PDF
|
FDD4N60NZ
FDD4N60NZ
|
Untitled
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
|
Original
|
PDF
|
FDD4N60NZ
|
Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
|
Original
|
PDF
|
FDPF4N60NZ
FDPF4N60NZ
|
TESTO10
Abstract: No abstract text available
Text: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
PDF
|
FDPF14N30
FDPF14N30
TESTO10
|
Untitled
Abstract: No abstract text available
Text: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
PDF
|
FDB14N30
|
FDA59N30
Abstract: No abstract text available
Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
PDF
|
FDA59N30
FDA59N30
|
Untitled
Abstract: No abstract text available
Text: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8 Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and
|
Original
|
PDF
|
FDPF10N60ZUT
FDPF10N60ZUT
50nsec
|
