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    FDD4N60NZ Price and Stock

    onsemi FDD4N60NZ

    MOSFET N-CH 600V 3.4A DPAK
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    Newark FDD4N60NZ Reel 2,500
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    Rochester Electronics FDD4N60NZ 31,353 1
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    Fairchild Semiconductor Corporation FDD4N60NZ

    FDD4N60NZ - Power Field-Effect Transistor, 3.4A, 600V, 2.5ohm, N-Channel, MOSFET, TO-252AA
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    Rochester Electronics FDD4N60NZ 2,500 1
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    ComSIT USA FDD4N60NZ 2,500
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    Others FDD4N60NZ

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    Chip 1 Exchange FDD4N60NZ 10,665
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    FDD4N60NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD4N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V 3.4A DPAK Original PDF

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    FDD4N60NZ

    Abstract: No abstract text available
    Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		PDF FDD4N60NZ FDD4N60NZ

    Untitled

    Abstract: No abstract text available
    Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		PDF FDD4N60NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDD4N60NZ N-Channel MOSFET 600V, 3.4A, 2.5Ω Features Description • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDD4N60NZ FDD4N60NZ